2SC3324 Search Results

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3324 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700

Contextual Info: Reliability Tests Report Product Name: 2SC3324 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

marking CBG

Abstract: 2SC3324 NF 05
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High voltageVCEO=120V 0.4 3 1 Low noise. 0.55 High hFE.hFE=200 to 700 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

Contextual Info: T O SH IB A 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V q e O = 120V Excellent hpE Linearity hpE (IC = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.) High hpE

Cbg MARKING TRANSISTOR

Abstract: 2SC3324 2SA1312
Contextual Info: TO SH IBA 2SC3324 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUD IO FREQUENCY LO W NOISE A M PLIFIER APPLICATIONS. High Voltage : V cEo = 120V Excellent hpg Linearity : hFE (Ie = 0.1mA) / hFE (Ie = 2mA) = 0.95 (Typ.) High hEE

Cbg MARKING TRANSISTOR

Abstract: TRANSISTOR CBG 2SA1312 2SC3324
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V ç e O = 120V Excellent hpE Linearity hFE dC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.) High hpE

Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) · High hFE: hFE = 200~700

2sc3324

Abstract: marking CB
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS W ÊF mm mm Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V c e O = 120V Excellent hp^ Linearity : hFE dC = 0,1mA) / hFE (IC = 2mA) = 0,95 (Typ.) High hjrg

Contextual Info: 2SC3324 S ILIC O N NPN E P IT A X IA L T Y P E AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. U nit in mm High Voltage : V c e o = 120V + 0.5 2 3 - 0.3 Excellent hpE Linearity : hyE le = 0.1mA / hpE (Iç = 2mA) = 0.95 (Typ.) High hpE Low Noise + 0.25

nec 2401

Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
Contextual Info: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463

Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200 to 700

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs