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    2SA1312 Search Results

    2SA1312 Datasheets (28)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1312
    Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part Number: 2SC3324; DC Current Gain hFE, min: (min 200) (max 700); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -120) Original PDF 310.81KB 5
    2SA1312
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.27KB 1
    2SA1312
    Unknown Japanese Transistor Cross References (2S) Scan PDF 38.43KB 1
    2SA1312
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 116.22KB 2
    2SA1312
    Unknown Transistor Substitution Data Book 1993 Scan PDF 40.15KB 1
    2SA1312
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.72KB 1
    2SA1312
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 138.07KB 1
    2SA1312
    Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF 236.25KB 4
    2SA1312
    Toshiba TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF 217.77KB 3
    2SA1312
    Toshiba PNP transistor Scan PDF 236.25KB 4
    2SA1312
    Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF 61.33KB 1
    2SA1312BL
    Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF 310.79KB 5
    2SA1312-BL
    Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF 310.79KB 5
    2SA1312-BL
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.27KB 1
    2SA1312BL
    Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF 236.24KB 4
    2SA1312BLTE85L
    Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF 310.79KB 5
    2SA1312-BL(TE85L,F
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 120V 0.1A S-MINI Original PDF 309.21KB
    2SA1312-BL(TE85L,F)
    Toshiba 2SA1312 - Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R Original PDF 310.79KB 5
    2SA1312BLTE85R
    Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF 310.79KB 5
    2SA1312-GR
    Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF 310.79KB 5
    SF Impression Pixel

    2SA1312 Price and Stock

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    Toshiba America Electronic Components 2SA1312-BL(TE85L,F)

    - Tape and Reel (Alt: 2SA1312-BL(TE85L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SA1312-BL(TE85L,F) Tape & Reel 19 Weeks, 6 Days 3,000
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    Vyrian 2SA1312-BL(TE85L,F) 9,517
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    SOURIAU-SUNBANK 21A35102SA-1312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    PEI Genesis 21A35102SA-1312
    • 1 $0.00
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    Toshiba America Electronic Components 2SA1312-GR(TE85L,F

    Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SA1312-GR(TE85L,F 8,098
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    Toshiba America Electronic Components 2SA1312-BL

    TRANS PNP 120V 0.1A S-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics 2SA1312-BL 66,000
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    • 100 $0.64
    • 1000 $0.43
    • 10000 $0.43
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    2SA1312 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    2sa13122sc3324 PDF

    MARKING J1A

    Abstract: 2SA1312 2SC3324
    Contextual Info: 2SA1312 TO SH IBA 2 S A 1 312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. • High Voltage : V q eo - _ 120V • Excellent hpg Linearity : hFE (Ic= - 0 . 1mA) / hFE (1q = - 2mA) = 0.95 (Typ.)


    OCR Scan
    2sa13122sc3324marking j1a PDF

    MARKING HRA

    Abstract: 2SA1312 2SC3324
    Contextual Info: 2SA1312 TOSHIBA 2 S A 1 312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • High Voltage : V çeq = —120V • Excellent hFE Linearity : hFE (IC = —0.1mA) / hFE (IC = - 2mA) = 0.95 (Typ.)


    OCR Scan
    2sa1312--120v2sc3324marking hra PDF

    2SA1312

    Abstract: 2SC3324
    Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    2sa13122sc3324 PDF

    Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1312 U nit in mm A U D IO FREQUENCY L O W NOISE AM PLIFIER APPLICATIONS. • High Voltage : V q e o = -1 2 0 V • Excellent hjpj] Linearity : hpE Ic = - 0.1mA / hFE (Iq = - 2mA) = 0.95 (Typ.) • High hp>E : hpE = 200-700 . Low Noise : NF (2) = 0.2dB (Typ.), 3dB (Max.) at f= lk llz


    OCR Scan
    2sa13122sc3324 PDF

    marking ABG

    Abstract: 2SA1312 ABG marking hFE CLASSIFICATION Marking IC01 Rating
    Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Type 2SA1312 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 Features 1 Low noise. 0.55 High hFE. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1


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    2sa1312ot-23-120v-10ma+4marking abgabg markinghfe classification markingic01 rating PDF

    2SA1312

    Abstract: 2SC3324
    Contextual Info: 2SA1312 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1312 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCEO = −120 V


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    2sa13122sc3324o-236modsc-59 PDF

    Contextual Info: TO SHIBA 2SA1312 2 S A 1 312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. High Voltage : V q e O = —120V Excellent hpE Linearity hFE dC = - 0-lmA) / hFE (IC = - 2mA) = 0.95 (Typ.)


    OCR Scan
    2sa13122sc3324 PDF

    2SA1312

    Abstract: 2SC3324
    Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


    Original
    2sa13122sc3324 PDF

    2SA1312

    Abstract: 2SC3324
    Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) · High hFE: hFE = 200~700


    Original
    2sa13122sc3324 PDF

    SC-59 marking c5d

    Contextual Info: TOSHIBA 2SA1312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 w êêf m m • 31 1 m tr ■ AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm • High Voltage : V q e q = —120V + 0.5 3.5-as • Excellent h pg Linearity


    OCR Scan
    2sa1312--120v2sc3324sc-59 marking c5d PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan
    2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1 PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan
    2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n PDF

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan
    o-236/sot-232sa116215new+92sc25322sc27142sc27152sc27162sc29962sc33402sa13242sc33392sc3426 PDF

    2SC3324

    Abstract: 2SA1312
    Contextual Info: 2SC3324 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3324 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700


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    2sc33242sa1312o-236modsc-59 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    bce0030cs-167bce0030dlm2804+9marking 513 sod-323land dpu 230toshiba diode 1ss416 footprint5252 f solarsot23 2fvtah8n401kic sj 4558zener diode reference guidern4983 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan
    ss2205un411hrt1p234sdta123ys+152sa17812sa11622sb7362sb709a2sa12352sa17532sa16282sb814hsi 5272sa12842sa11782sa12832sa15862sb10432sa934 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mabce0030dssm3j307tssm3j328r+1ssm3j334r PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    sce0003aesm 740transistor smd t04 51d245a+7lm2804transistor smd t04solar garden light controller 4 pin2fu smd transistortransistor t04 smdpnp octal darlington transistor arrays dipwb126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan
    2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr PDF