2SC211 Search Results

2SC2117

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2117 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S39MAX. FEATURES : 0B5MAX Output Power : Po=2.8W Min. ( f=l75MHz, VCC=13.5V, Pi=0.15W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR J2ÍQ.4 5

opto 421

Abstract: 2SC2117 07490
Contextual Info: TOSHIBA-{DISCRETE/OPTO} 9097250 TOSHIBA Sb DEI ÌG^ESG 5 òC DISCRETE/OPTO 07490 D 00Q 74ciG =1 T - 3 3 - o t r ' 2SC2117 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. Í& 3 9 M A X . 38.5MAX FEATURES : Output Power :

2SC2118

Contextual Info: 2SC2118 SILICON NPN E P ITA X IA L PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm Zfe39MAX- FEATURES gfe.5MAX. : Output Power : Po=5W Min. -H -l ( f=175MHz, Vcc=13.5V, Pi=0.6W ) Angles with 30:1 VSWR -t-H 0 CU5 100% Tested for Load Mismatch Stress at All Phase

2SC2118

Abstract: 2SC211
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2118 VHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm Z>a39MAX FEATURES : Output Power : 0& S M A X Po=5W Min. ( f=175MHz, Vcc=13.5V, Pi=0.6W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: 3T TOSHIBA {DI SCRE TE /O PT O} u h f —c '<* n&m&vtt&m v O UHF~C Band O H ig h o o Speed DE~| T O ^ a S Q Low No i s e . A m p l i f i e r A p p l i c a t i o n s S w itch in g App1ic a tio n s f T = 6 . 5G H z • Gp e = 1 1.5d B f = 2GH z MAXIMUM R A T I N G S

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2SC2115

Abstract: DDD374 S21E
Contextual Info: 3T TOSHIBA {DISCRETE/OPTO} 9097250 TOSHI BA DISCRETE/OPTO 39C 00370 o u H F -c o i i s '<-s vi& m & M m m a* O U H F —C O High Band Speed T^3/-/S . Low No ¡ s e Ampi i f i e r App 1 i c a I i o n s Swi t c h i n g A p p 1 i c a t i o n s • f t = 6.5GHz

D836A

Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483

Contextual Info: TOSHIBA ÍDIS CR ETE/ OP TOJ 9097250 T O SH IB A Sh D F I ^ D T V a S Q Q D 0 7 4 C]S E | <D I S C R E T E / O P T O SILICON NPN EPI TAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm Zfe3 9 MAXgfe.5 MAX. FEATURES : Output Power : Po=5W Min.)

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

l2-dp

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } 3T O V H F -U H F i& ü ^ ü ig ffi O VHF Mi n i - P a c k a g e . 1Ü ^1* Ü3] #s 2.2 mm0 ^ — a * . UHF Low No i s e An p l i f i e r 2.2mm0 m o l d MAXIMUM R A T I N G S 31/ 9 f • X. í y ? Rf X í y ? -5 — . * Pa^HEE

2SC288A

Abstract: 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC201 20 300 650 2SC202 80 300 650 2SC203 40 200 350 2SC204 30 5 200 350 2SC205 80 200 350 2SC206 20 2 25 200 2SC207 20 3 25 200 2SC208 20 3 25 200 2SC209 20 3 25 200 2SC210

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2SC2116

Abstract: OPTo F02
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> O V H F — O V H F '"»• U H F 3T DeTJ T O T O S O □□□□3 7 S 7 - L o w N o i s e A n p l i f i e r 'J" M ^1* ID iff . 2.2 mm0 ^ M i . 2 .2 m m 0 n i-P a c k a j j e M A X I M U M R A T I N G S A p p l i c a t i o n

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S