2SB946 Search Results

2SB946

Abstract: 2SD1271
Contextual Info: Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications

2SD1271

Abstract: 2SD1271A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS

2SB946

Abstract: 2SD1271
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 APPLICATIONS

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

Contextual Info: Power Transistors 2SB946 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 • Features • • • • Unit ! mm 4.4 max. 10.2max. 5.7 max. 2.9 max. Low collector-emitter saturation voltage VcE<sao

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB946

Abstract: 2SD1271
Contextual Info: SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1271 ·Low saturation voltage ·Good linearity of hFE ·High current APPLICATIONS ·For power switching applications

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

2SB94

Abstract: 2SB946 2SD1271
Contextual Info: Power Transistors 2SB94Ó 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 Unit ! mm 4.4max. 10.2max. • Features • Low collector-em itter saturation voltage V c E < s a t> • Good linearity of DC current gain (Iife)

2SB946

Abstract: 2SD1271
Contextual Info: JMnic Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications PINNING

2SB946A

Abstract: 2SD1271 2SB0946 2SB946 2SD1271A
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 2SB946 and 2SB0946A (2SB946A) Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage

2SB946

Abstract: 2SD1271
Contextual Info: Power Transistors 2SB946 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB0946

Abstract: 2SB946 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0946

Abstract: 2SB946 2SD1271
Contextual Info: Power Transistors 2SB0946 2SB946 Silicon PNP epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one

TO-220Fa

Abstract: 2SB946 2SD1271A
Contextual Info: Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors BCE Features ﹒For Power Switching. ﹒With TO-220Fa package ﹒Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO

2SD1271

Abstract: 2SD1271A
Contextual Info: Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB946/946A ・Low collector saturation voltage ・Good linearity of hFE ・Large collector current IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB946A

Abstract: 2SB946 2SD1271 2SD1271A
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1271 base voltage 2SD1271A Collector to

2SB0946

Abstract: 2SB946 2SD1271
Contextual Info: Power Transistors 2SB0946 2SB946 Silicon PNP epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and