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2SB1189 Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB1189	Kexin	Medium Power Transistor	Original	PDF	48.63KB	1
2SB1189	ROHM	Medium power transistor	Original	PDF	51.64KB	1
2SB1189	TY Semiconductor	Medium Power Transistor - SOT-89	Original	PDF	75.2KB	1
2SB1189	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	109.17KB	2
2SB1189	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.84KB	1
2SB1189	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	106.58KB	1
2SB1189	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	39.97KB	1
2SB1189	ROHM	SOT-23, SOT-89 and D-Pak Transistors	Scan	PDF	128.61KB	1
2SB1189	ROHM	Transistor Selection Guide	Scan	PDF	63.69KB	1
2SB1189T100P	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF	51.64KB	1
2SB1189T100Q	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF	51.64KB	1
2SB1189T100Q	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89	Original	PDF		3
2SB1189T100R	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF	51.64KB	1
2SB1189T100R	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89	Original	PDF		3

2SB1189	Shenzhen Heketai Electronics Co Ltd	PNP bipolar transistor in SOT-89 package with -80 V collector-base and collector-emitter voltage, -0.7 A collector current, 500 mW power dissipation, DC current gain up to 390, and transition frequency of 100 MHz.	Original	PDF
2SB1189	AK Semiconductor	PNP transistor in SOT-89 package with -80V collector-emitter voltage, -0.7A continuous collector current, 120-390 DC current gain, and -0.4V collector-emitter saturation voltage at -500mA.	Original	PDF
2SB1189(RANGE:180-390)	JCET Group	PNP transistor in SOT-89-3L package with -80V collector-base and collector-emitter breakdown voltage, -0.7A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 82 to 390.	Original	PDF

2SB1189 Price and Stock

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ROHM Semiconductor


ROHM Semiconductor 2SB1189T100 Trans GP BJT PNP 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB1189T100		104,000		1,000	1 - 10 - 100 - 1000 $0.14 10000 $0.13	Buy Now
ROHM Semiconductor 2SB1189T100R Trans GP BJT PNP 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB1189T100R		12,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SB1189T100R		9,600			1 $0.65 10 $0.65 100 $0.65 1000 $0.65 10000 $0.19	Buy Now
ROHM Semiconductor 2SB1189T100Q Trans GP BJT PNP 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB1189T100Q		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SB1189T100Q		800			1 $1.05 10 $1.05 100 $0.53 1000 $0.42 10000 $0.42	Buy Now
ROHM Semiconductor 2SB1189T100Q/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB1189T100Q/R		230		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
Quest Components	2SB1189T100Q/R		184			1 $1.50 10 $1.50 100 $0.45 1000 $0.45 10000 $0.45	Buy Now
ROHM Semiconductor 2SB1189T113Q SMALL SIGNAL BIPOLAR TRANSISTOR, 0.7A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	2SB1189T113Q		1,000			1 $0.45 10 $0.45 100 $0.45 1000 $0.19 10000 $0.19	Buy Now
	2SB1189T113Q		1,000			1 $0.45 10 $0.45 100 $0.45 1000 $0.19 10000 $0.19	Buy Now

2SB1189 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BD transistor Abstract: smd marking BD 2SB1189 BD marking Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80	Original	2sb1189 -500ma -50ma 100mhz +3bd transistor smd marking bd bd marking	PDF
marking BDR Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	ot-89 2sb1189 2sd1767 -100ma +6-500ma -50ma 100mhz marking bdr transistor 2sd1767 marking 82	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR	Original	ot-89-3l 2sd1767 2sb1189 100ma +2500ma 100mhz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	ot-89-3l 2sb1189 2sd1767 -100ma +3-500ma -50ma 100mhz	PDF
2Sb1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	2sb1189 2sb1238 2sd1767 2sd1859 +4sc-62 t100 ic t100 bd marking code transistor rohm	PDF
l289 Contextual Info: Is 7 > V X $ /Transistors 2SB1189 /M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • 4^JfiTj-;£[21/D iin e n s io n s Unit : mm 1 ) = i u ' ? i i j a ^ P c = 2 w r ' * 5 [, (4 0 x -7 40X0.7mm-tz 7 S 2) ra R E E , V ifc V ceo= - 80V, X	OCR Scan	2sb1189 40x40x0 2sd1767 l289	PDF
3072 rohm Abstract: 6440 diode 2SB1189 Contextual Info: SPICE PARAMETER 2SB1189 by ROHM TR Div. * 2SB1189 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1189 PNP + IS=300.00E-15 + BF=228.01 + VAF=20.700 + IKF=.85858 + ISE=300.00E-15 + NE=1.3435 + BR=14.770 + VAR=100 + IKR=6.6440 + ISC=13.781E-12 + NC=1.3072 + NK=.6702	Original	2sb1189 q2sb1189 00e-15 781e-12 +688e-12 978e-12 0758e-9 08e-9 3072 rohm 6440 diode	PDF
Contextual Info: Product specification 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80 V Emitter-base Voltage	Original	2sb1189 -500ma -50ma 100mhz	PDF
Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278	Original	2sb1189 2sb1238 2sb899f 2sd1767 +42sd1859 2sd1200f 96-618-b13 96-750-d13	PDF
Q2SB1189 Contextual Info: 2SB1189 h "7 > ' s Z $ / T ransistors 0 Q D 4 4 0 Q PNP y ' J : l > S ; 7 > v * * Epitaxial Planar PNP Silicon Transistor Power Amp. • 1$* • W fM ííE l/ D im e n s io n s Unit : mm 1 ) 3 L ^ * » * P c = 2 W T '* $ o (40 X 4 0 X 0 .7 m m -b 7 5 v ? £ * 6 { iffl0 # )	OCR Scan	2sb1189 2sd1767 40x40 sc-62 +1q2sb1189	PDF
2SD1659 Abstract: 2SB689F 2sb123b Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)	OCR Scan	2sb1189 2sb1238 2sb899f 2sd1767 +72sd1859 2sd1200f --80v 2sb123b 2sb689f -126fp 2sd1659	PDF
transistor 2sb1238 Abstract: 2sb1238 Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	2sb1189 2sb1238 2sd1767 2sd1859 +2sc-62 transistor 2sb1238	PDF
2SD1859 Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621 Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	2sd1767 2sd1859 2sb1189 2sb1238 +3sc-62 t100 sc621	PDF
2SD1859 Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	2sd1767 2sd1859 2sb1189 2sb1238 +1sc-62	PDF

SS138 Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899 Contextual Info: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o	OCR Scan	2sb1189 2sb1238 2sb899f 2sd1767 +62sd1859 12sd1200f 2sb889f psb1189 ss138 2sb899	PDF
2SB1238 Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation	Original	2sb1189 2sb1238 2sd1767 2sd1859 +2sc-62 r1010a	PDF
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)	OCR Scan	2sb1189 2sb1238 2sb899f 2sd1767 +42sd1859 2sd1200f 2sb889f 2sd1767/2sd1859/2sd1200f	PDF
2SB1189 Abstract: 2SB1238 2SD1767 2SD1859 T100 Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	2sb1189 2sb1238 2sd1767 2sd1859 +2sc-62 t100	PDF
2sd1767 Abstract: 2SD1859 Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	2sd1767 2sd1859 2sb1189 2sb1238 +1sc-62	PDF
Contextual Info: 2SB1189 N 7 > V ^ £ /Transistors 9 Q R 1 1 A Q « w D • x tf$ y 7 J i'y is -ïB P N P '> v = i> b 7 > y z 2 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. • fl-Jl^iäslil/D im ensions Unit : mm • ttft 1 )3 U -7 $ i^ P c = 2 W T '< fe 5 0 (40 X	OCR Scan	2sb1189 2sd1767 25ions	PDF
2SD1761 Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188 Contextual Info: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215	OCR Scan	2sb1184 2sb1184f5 2sbu85 2sb1186 +122sb1186a 2sb1187 2sb1188 2sb1209 2sd1812 sc-51 2sd1761 2sb1216 2sb1220 2sb118 2sb1204 2sb1208	PDF
marking 07 sot89 Contextual Info: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)	Original	2sb1189 ot-89 2sd1767 -100ma +4-500ma -50ma 100mhz marking 07 sot89	PDF
2SB1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage	Original	2sb1189 2sb1238 2sd1767 2sd1859 +1t100	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF

2SB1189 Search Results

2SB1189 Datasheets (17)

2SB1189 Price and Stock

ROHM Semiconductor 2SB1189T100

ROHM Semiconductor 2SB1189T100R

ROHM Semiconductor 2SB1189T100Q

ROHM Semiconductor 2SB1189T100Q/R

ROHM Semiconductor 2SB1189T113Q

2SB1189 Datasheets Context Search

BD transistor

marking BDR

2Sb1238

l289

3072 rohm

Q2SB1189

2SD1659

transistor 2sb1238

2SD1859

2SD1859

SS138

2SB1238

2SB1189

2sd1767

2SD1761

marking 07 sot89

2SB1238

sn76131