2SC2071
Abstract: 2sa979 2sa939 2SA910 2SA987 2SA991 2SC2238 2SA968 2SA939 B 2SA995 2SC2011
Contextual Info: - 18 - Ta=25,C.*6HáTc=25,C M 2SA937MLN 2SA939 2SA940 2SA949 2SA950 2SA952 2SA953 2SA954 2SA963 2SA965 2SA966 2SA968 2SA968A 2SA968B 2SA970 2SA979 2SA984 2SA984K 2SA985 2SA985A 2SA987 2SA988 2SA990 2SA991 2SA992 2SA995 2SA999 2SA999L 2SA1005 2SA1006 2SA1006A
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2sa937mln2sa9392sa9402sa949+142sa9502sa9522sa9912sc18452sa992100hz2sc20712sa9792sa9102sa9872sc2238 2sa9682sa939 b2sa9952sc2011
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2SC2071
Abstract: 2SC2025 2SA934 2SA939 2SC2053 2sc207827mhz 2SC2023 2SC2026 2SC2055 2sc2065
Contextual Info: - 114 - Ta=25'C, *EP(äTc=25‘C M & fx £ W ÌÉ VcBO (V) 2SC2001 2SC2002 2SC2003 2SC2021 ocr“>noii tOUiUi ILllIM 2SC2021H 2SC2021MLN 2SC2022 2SC2023 2SC2024 2SC2025 2SC2026 2SC2027 2SC2053 2SC2055 2SC2056 2SC2058 2SC2058S 2SC2059K 2SC2060 2SC2061 2SC2062
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2sc20012sc20022sc20032sc2021+162sc2021m2sc2021mln500mhz2sc20s5o-202mod2sc20682sc20712sc20252sa9342sa9392sc20532sc207827mhz2sc20232sc20262sc20552sc2065
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk52bu724asmje20552n3055 replacementbux98pibd263bd699bd2922n5037
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk522sc4977mje102bd6992sa1046bu808dfi equivalent2n3055 replacementmj2955 replacementbuh513
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171b0411b0733thd200f1dk522sc49772n5415 replacementtip 2n3055bd68dsgs-thomson cross referencebux37 thomson
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd179bd180bd179-10tip73b+14tip74tip74atip74btip75tip75abd179-10 equivalentbu1082sa10462sc7bdx54bux98abu326bu100bul1
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943
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BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
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buv21tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108transistor bc 5742n6107 motorola2sc1943mj3055 to2202sc1419bu326bu100mj*150332n6277
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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bd136bd138bd140bd140-10+16tip73btip74tip74atip74btip75tip75apin configuration transistor bd1402sd669 equivalentbuv44bd140 equivalent transistormje15020bd140 equivalentbd250c equivalentrca1222n6045 npn power darlingtontransistor bd 136
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tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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mj3281amj1302a204aatip73b+14tip74tip74atip74btip75tip122 tip127 audio ampbu108k 3569d44h1tip120mj1302a equivalent2sb595bdx54bu326bu100
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mj11015 equivalent
Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor
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tip73btip74tip74atip74b+16tip75tip75atip75btip75c2n64882n6490mj11015 equivalentmj11016 equivalent2sc1096 equivalentnsd15mj3237bu108bd875 equivalentmj4502 equivalent2sd718 2sb688 amplifier schematicsdn6000
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mje15033 replacement
Abstract: 2SD694 2SC1832 MJE340 D40K MJ12002 BDW59 2SC187 MJ3237 BD3851
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc Max @ IC = 3.0 Adc
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bd241bbd242bbd241cbd242c+12tip73btip74mje15033 replacement2sd6942sc1832mje340d40kmj12002bdw592sc187mj3237bd3851
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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bdx53bbdx53c220abbdx54b+14bdx54ctip73btip74tip74abdx54c equivalentbox 53c darlington power transistortip122 d-pak packageall similar transistor 2sa715bdx53c motorolabu108transistor tip31amplifier 2sd718 2sb688 schematicbdx542n386
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transistor equivalent of BU406
Abstract: bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
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220abbu406bu407tip73b+16tip74tip74atip74btip75tip75atip75btransistor equivalent of bu406bu406 replacement typetransistor 2sc1827transistor 1557 btransistor tip142transistor 2sa1046equivalent of transistor mje13007bu326bu108bu100
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TIP42C as regulator
Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems
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mje1123tip73btip74tip74a+15tip74btip75tip75atip75btip75ctip42c as regulatorbu1082sc103npn power darlington transistors high voltage high icm to-247nsp21002sd68bdx542sc1943mje24822sd675
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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buv11tip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488tip34c equivalentbu108transistor bc 3845d2 6buv11 equivalentbdx542n3025 equivalentbu326bu100
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BU108
Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A
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buv20tip73btip74tip74a+12tip74btip75tip75atip75btip75c2n6488bu1082sc194transistor bc 5742sc1419bu326bu100
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000
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BU108
Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd676bd675bd676abd678+10bd678abd680bd680abd682tip73bbu108transistor replacement guide bd676bd676a application notebu326bu100
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