2SA47 Search Results

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

2SA473

Abstract: 2SC1173 2SA473 O
Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier

2SC1173

Abstract: 2SA473
Contextual Info: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

2SC1173

Abstract: 2SA473 2sa473 transistor transistor 2sa473 Transistor 2sC1173
Contextual Info: 2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

Contextual Info: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

Contextual Info: 2SC1173 SILICO N NPN E P IT A X IA L TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE* • Complementary to 2SA473 and 5 Watts Output 1.5MAX. 07 6 Applications.

2sa473

Abstract: 2SA473 O 2SC1173 2SA473 0
Contextual Info: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator

2SC1173

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator

2sc1173

Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
Contextual Info: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier

transistor 2sa473

Abstract: transistor 2sc1173 2SA473 2sc1173 2SA473 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA473 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1173 APPLICATIONS ·Power amplifier applications.

2SA473

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING

2SA473

Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
Contextual Info: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2sd526 equivalent

Contextual Info: 1.1. Maximum ratings of transistors ercised not to exceed any of the absolute m axi­ mum ratings, while taking into account fluctu­ ation of the supply voltage, deviation in prop­ erties of the electrical components, exceeding the maximum ratin g s while adjusting the c ir­

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

cd 1191 cb

Abstract: 2SC4532
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4532 TV H O R I Z O N T A L D E F L E C T I O N OUT P U T APPLICA TIO NS. Unit in m m H O R I Z O N T A L D E F L ECT ION OU TP U T FOR HIGH R ESO L U T I O N DISPLAY. H IG H S P E E D S W I T C H I N G APPLIC ATI ONS .

2sc3893a Toshiba

Abstract: 2SC3893A 2SA473Y 2SC1173-Y
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE H O RIZONTAL D E F LECTION OUTPUT FOR HIGH R E S O L U T I O N DISPLAY. . . . . Unit in mm High Voltage : V c b o <S 1500V High Speed Switching : Resistive Load tf=0. 2(is(Typ.) Collector Metal is Fully Covered with Mold Resin.

Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA D E ^ O ^ a S D 000771 3 (DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE_ Unit in nun HIGH POWER SWITCHING REGULATOR APPLICATIONS. 03SOMAX. FEATURES: cteJLOMAX . • High Voltage ; V c b o =900V

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N1103

Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n3604 transistor

Abstract: 2SC5220 2N1103 2N3604 2SC5240 2SA518 OC603 2N2161 OC169 T-044
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.