2S43 Search Results

Contextual Info: METRIC DO NOT SCALE PRINT C 343047 3rd ANGLE AMERICAN PROJECTION D -4 * £> 3 8 *0 , *: FU LL KAO V Ä ii -vv- M S Is . . s ü k • - V v v :- 5om a% , Ö : . . ".• ö : ta- Notes:i.U SE CONTACTS Pt/N* 34-2S43 0 K 3 4 2 S + S B 2 ,7 y /s coAfA/ecra/z

Contextual Info: ^ S e rie R W N / R W C S M D -H o c h la s td ra h tw id e rs ta n d T e c h n isc h e D a te n S e rie s R W N / R W C S M D P o w er resisto r S p e c ific a tio n Typ Type r •U U. V / I T R O H M VtmOHM DEUTSCHLAND OMSK SIEMENMTR. 7-S 2S431 PtNNEBERG

LN 358

Abstract: LN 358 n 4562b f1n diode 2812B
Contextual Info: Microisemi Corp. I ? T h e d io d e e x p e n s / SANTA ANA, CA SCOTTSDALE, A Z I 1N2804 thru 1N2846B and 1N4557B thru 1N4564B For m ore inform ation call: 602 941-6300 FEATURES SILICON 50 WATT ZEN ER DIODES . ZENER VOLTAGE 3.9V to 200V . AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

dali schematic

Abstract: IR2159 pic16f628 RB511 357nt ELECTRONIC BALLAST MICROCONTROLLER ELECTRONIC BALLAST 36W circuit diagram dali bridge ELECTRONIC BALLAST 6 LAMP SCHEMATIC dali source code
Contextual Info: IRPLDIM2 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Digitally Addressable DALI Dimming Ballast Reference Design By Cecilia Contenti and Tom Ribarich International Rectifier and Ross Fosler (Microchip) FEATURES • • • •

Contextual Info: 64K X 16 BiCMOS/CMOS STATIC RAM MODULE 1dt Integrated Device Technology, Inc. IDT7MP4027 FEATURES: DESCRIPTION: • High density 1 m eg ab it s ia lic R A M m odule T h e ID T 7 M P 4 0 2 7 is a 6 4 K x 16 static R A M m odule c on­ structed on an epoxy la m in a te F R -4 ) su b s trate using 4 6 4K

schneider LC1-D09 wiring diagram

Abstract: Schneider LC1D18 wiring diagram MPSF23 HOM1632L200TCFT WIRING DIAGRAM lc1d32 HOM612L100 Square D Relay Class 8502 QOC20U100 QOC30U NQOD454L600
Contextual Info: 2008 SQUARE D REF GUIDE Flip 0514.qxd SQUARE D INFORMATION RESOURCES Local Square D Sales Office: _ _ Square D Customer Information Center: 1-888-SQUARE D (1-888-778-2733) The 2008 Pocket Digest still contains Schneider Electric’s best selling catalog numbers from

Contextual Info: !: i l \ ? w FAST CMOS 16 -B IT TRANSPARENT LATCHES IDT54/74FCT16373T/AT/CT/ET IDT54/74FCT162373T/AT/CT/ET Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for

Contextual Info: Integrated Device Technology, Inc. FAST CMOS OCTAL LATCHED TRANSCEIVER IDT54/74FCT543T/AT/CT/DT IDT54/74FCT2543T/AT/CT DESCRIPTION: FEATURES: • Common features: - Low input and output leakage <1 nA max. - CMOS power levels - True TTL input and output compatibility

Contextual Info: 7 this smvi» "ns— prr— IS UWUU5WJ. FT 64 REV PEfl EC 0350-136-97 REV P E R EC 0 3 3 0 - 3 5 - 9 7 1. Ä RECEPTACLE ACCEPTS AN .006-,014 TH K. I.C . LEAD. TWO . 0 0 0 0 3 0 M I N . T H K . G O L D S T R I P E S I N C O N T A C T AREA, T IN -L E A D C S 3 -7 D

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

BF456

Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

H9718

Abstract: 623001 2504PN SS-332 AE320W MIL-C-38999 19-35 AE326W
Contextual Info: MILrC-389991,II,III tsifcr AERO ELECTRIC ' ! — _ TABLE OF CONTENTS MIUC-38999 SERIES I DESCRIPTION introduction, specifications, and part numbering syst&rn. PAGE MS27467, Plug with RFI grounding MS27466, Receptacle, wall mounting fiance 3 ¡2 MS27656, Receptacle, Back panel wall mourtliftgflangfe

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Eimac 100tl

Abstract: ec 360 tube DiTton Scans-0017249
Contextual Info: -M c C e i t e l SAN u l l o u g h BRUNO, , inc. LOW-MU TRIODE • M O DULATOR CALIFORNIA O SC ILLA TO R AMPLIFIER The Eim ac I00TL Is a low-mu pow er trio d e having a maximum p late dissipation rating o f 100 watts, and is intended fo r use as an am p lifier, oscillator or m odulator. It can be used a t its maximum

OC170

Abstract: OC169 oc44 2S125 OC45 OC171 2S93 2SA42 2SA37 2SA70
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber DC Current Gain fab/ft* Cob hFE (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) VCBO VEBO Ic (V) Electrical characteristics (Ta=25ºC) (V) Pc ºñ°í Tj 2SA12 -16 -0.5 -15 80 85 8 10 2SA13 2SA14 -12 -16 -0.5 -0.5 -15

Contextual Info: IDT7MP4027 64K x 16 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Tech n o logy, Inc. FEATURES: DESCRIPTION: • High density 1 megabit static RAM module • Low profile 40 pin DSIP Dual Single In-line vertical Pack­ age • Ultra fast access time: 10ns (max.)

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any