2SA12 Search Results

Contextual Info: i TOSHIBA 2SA124A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. &811AX. FEATURES: . Low Collector Saturation Voltage : vCE(sat)*“0.4V(Max.) at Ic*-3A . High Speed Switching Time : tstg=1.0/<s(Typ.)

Contextual Info: T O S H IB A 2SA1244 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process * High Current Switching Applications s rJ- Features CM Ö •H • Low Collector Saturation Voltage " V ce (Sat) = -0.4 V (Max.) at lc = -3A • High Speed Switching Time

LED display module

Contextual Info: MULTI CHIP TD62M8603F BIPO LAR DIGITAL INTEGRATED CIRCUIT 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8603F is M ulti Chip 1C incorporates 8 low saturation discrete 2SA1203 transistors. This IC is suitable for a battery use motor drive and LED display module applications.

2SA1227A

Abstract: 2SA1227 2987A C 2987A hfe1 2987A pnp 2sc2987
Contextual Info: Inchange Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications

2SA1265N

Abstract: 2SC3182 2SA1265
Contextual Info: Inchange Semiconductor Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

500ma 40v pnp

Abstract: 2SA1280
Contextual Info: Inchange Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SA1250

Contextual Info: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN

2SA1232

Abstract: 2SC3012
Contextual Info: JMnic Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC3012 APPLICATIONS ・Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2SA1280

Contextual Info: JMnic Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High power dissipation APPLICATIONS ・For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN

2SA1265N

Abstract: 2SC3182 2SA1265
Contextual Info: JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3182 ・2SA1265 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1298

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1298 Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. +Û5 2.5 — a 3 FEATURES: . High DC Current Gain : hpE=100~-320 . Low Saturation Voltage : VcE sat =-0-4V(Max.) (Ic=-500mA, lB=-20mA) . Suitable for Driver Stage of Small Motor

2SA1290

Abstract: 2SC3254
Contextual Info: JMnic Product Specification 2SA1290 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Short switching time ・Low collector saturation voltage ・Complement to type 2SC3254 APPLICATIONS ・Various inductance lamp drivers for electrical equipment

2SA1288

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1288 S ilic o n PN P P o w e r T ra n s is to rs DESCRIPTIO N • W ith T O -220 package • Low collector saturation voltage • S hort sw itching time A PP LIC A TIO N S • Various inductance lam p drivers

2SA1216

Abstract: 2SC2922
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1216 Silicon PNP P o w er Transistors DESCRIPTION • W ith M T-200 package • C om plem ent to type 2SC 2922 APPLICATIONS • A ud io and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base o Collector:conr>ected to

2SA1291

Abstract: 2SC3255
Contextual Info: AOK AOK Semiconductor P ro d u c t S pecification S ilicon PNP P ow er T ransistors 2SA1291 DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for

2SA1291

Contextual Info: ["O rdering number: E N 1201C 2SA1291/2SC3255 N0.I2OIC PN P/N PN Epitaxial P la n ar Silicon Transistors SAW O i 60V/10A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. •Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

2SA1202

Abstract: 2SC2882
Contextual Info: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)

2SA1205

Abstract: I3002
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1205 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -3PN package • High power dissipation A PP LIC A TIO N S • For general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

2SA1263N

Abstract: 2SC3180N 100U 2SA1263
Contextual Info: AOK P roduct S p e cifica tio n AOK Semiconductor 2SA1263N Silicon P N P Pow er Transistors D E S C R IP T IO N • W ith T O -3 P l p ackag e • C om plem ent to type 2 S C 3 1 8 0 N • 2 S A 1 2 6 3 with short pin A P P L IC A T IO N S • P ow er am plifier applications

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

2SA1204

Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

MARKING MD

Abstract: 2SA1245
Contextual Info: Transistors IC SMD Type Silicon Pnp Epitaxial Planar Type 2SA1245 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector