100TL Search Results

LTV4N35

Contextual Info: L I T E M ? I General Purpose Type Photocoupler LTV4N35/LTV4N37 LTV4N35S/LTV4N37S LTV4N35M/LTV4N37M Features High current transfer ratio CTR : MIN. 100% at lF=10mA, Vce=10V Response time (ton : TYP,3ms at Vce=10V, lc=2mA, RL=100tl) Input-output isolation voltage :

EPITAXX

Abstract: FC Receptacle 100TL/FC
Contextual Info: E P I T A X X INC EME D • 3 3 L 0 4 0 b 000007^ 2 ■ EPITAXX ETX 100TL/FC T-41-50 InGaAs PIN Photodiode in FC Receptacle EPITAXX ETX 100TL/FC is a high speed planar InGaAs PIN photodiode mounted in a FC receptacle. It is designed for board or panel mounting in short haul telecom or datacom

EPITAXX

Abstract: lm 257 st ETX100TL-ST EPITAXX ETX 75
Contextual Info: E P I T A X X INC BME D • 3 3 b 0 4 0 b ÜOOOOfil G ■ EPITAXX ETX 10OTL/ST r T -4 1 -5 0 InGaAs Pin Photodiode in ST Receptacle Description: EPITAXX ETX 100TL/ST is a high speed planar InGaAs PIN photodiode mounted in an ST connector receptacle. It is designed for board or panel mounting in short haul telecom or datacom receivers. It

Contextual Info: User's Guide SLOU332A – January 2012 – Revised January 2012 AFE5803EVM Revision E Evaluation Module This document assists users in evaluating the AFE5803 highly integrated analog front-end devices through the use of the AFE5803EVM Evaluation Module. Included are setup instructions, printed-circuit

Contextual Info: HFA1135/883 & H i* !» High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting Features Description • This Circuit Is Processed In Accordance to MIL-STD- T h e H FA 11 3 5 /8 8 3 is a high speed, low power current feedback amplifier

Contextual Info: User's Guide SCDU004 – March 2013 TCA8424 Evaluation Module This document is the EVM user guide for the TCA8424. The device is a low-voltage keyboard scanner that can support up to 128 keys, with open drain outputs that can sink up to 12 mA of current for LEDs. The

w21 transistor

Abstract: 2SC4492 30983
Contextual Info: Ordering number: EN 3 0 9 8 _2 S C 4 4 9 2 NPN Triple Diffused Planar Silicon Transistor SAWO, High-Voltage Amp, High-Voltage Switching Applications F e atu res . High breakdown voltage • Small c0b • High reliability adoption of HVP process

Contextual Info: 3 4 OD ID 2 1 B O ±0. 1 CD A ±0. 1 m I £ O ±o. 1 1. 3 0 .8 ±0. 1 M jy m a c rm T tn r t * z *- - *- - ? POS. N o. r ±0.05 • t ^ A " N o .0 F o ■H CT 0.3 ^ 5ECT — C IR C U IT w V_ A O I n ^ 'A ~ A 10-1) NOTES; fr hn- 6 .4 . C5CALE /I in

TJ-251C

Contextual Info: IRFK/U33 Ö A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @

R113183

Abstract: 9228-N-140 R125705 8156-a-0440
Contextual Info: Cross Reference AEP 1-104 1-109 1-110 1-113 1-118/063 1-119 1-122 1-125 1-142 1-301/188 1-301/196 1-302/188 1-302/196 1-303/188 1-303/196 1-305/188 1-305/196 1001-1541-010 1001-1571-002 1001-1571-003 1001-7541-010 1001-7571-002 1001-7571-003 1002-1541-010

5VD4

Contextual Info: RC32DPM * Rockwell RC32DPM Mobitex Wireless Modem Data Pump with V.32 bis Wireline Support INTRODUCTION FEATURES The Rockwell RC32DPM modem data pump MDP provides the baseband signal processing needed to support the Mobitex wireless packet data system. The RC32DPM combines packetswitched data communication functionality with V.32 bis data

Contextual Info: User's Guide SLOU241 – September 2008 AFE5804EVM The AFE5804EVM is an evaluation tool designed for the ultrasound analog front-end AFE device AFE5804. In order to deserialize the outputs of the AFE5804, use of the ADSDeSer-50EVM during evaluation is also recommended.

Contextual Info: User's Guide SLLU141A – March 2011 – Revised May 2011 TX810, 8-Channel, Current-Programmable, Low-Noise, Transmit/Receive Switch Evaluation Module The TX810EVM evaluation module EVM provides a means to evaluate the functionality and performance of the TX810 transmit/receive switch. This user's guide contains the EVM printed-circuit board layout,

TS271

Contextual Info: r= 7 * 7 M , S C S -T H O M S O N M M I E J t ê T O i « T S 2 7 1 C ,I ,M PROGRAMMABLE SINGLE CMOS OPERATIONAL AMPLIFIERS • O FFSET NULL CAPABILITY by external compensation ■ SYMMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■THE TRANSFER FUNCTION IS LINEAR

lm 3059

Abstract: MC55
Contextual Info: IRFSZ14A Advanced Power MOSFET FEATURES BVoss - 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175"t Operating Temperature ■ Lower Leakage Current : 10 m A Max. @ VDS= 60V

EPITAXX ETX 300

Abstract: epitaxx EPITAXX ETX 300T EPITAXX ETX 100T ETX75T ETX 40 EPITAXX ETX 300 tl
Contextual Info: E r |s •■I i ETX 75T E T X 100T/TL 1 = V ETX 3 0 0 T H M H I M H - High Speed InGaAs Photodiodes Hermetically Sealed TO Packages Features A ■Photosensitive diameters of 75,100 or 300 |im ■High responsivity at 1300 and 1550 nm - Low capacitance, low dark current

35n120

Contextual Info: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient

Contextual Info: SSH22N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ V ^S O O V

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

HI0805R800R-00

Abstract: ERJ-2GEJ49R9 BLM18EG601SN1D HP8644 MNE20-5K5P10 bill of quantity excel format ERJ-2GEJ0000 SMA-J-P-H-ST-TH1 qth-040-01 blm15bd102sn1d
Contextual Info: User's Guide SLOU222B – March 2008 – Revised November 2009 AFE5805EVM The AFE5805EVM is an evaluation tool designed for the ultrasound analog front-end AFE device AFE5805. In order to deserialize the outputs of the AFE5805, an ADSDeSer-50EVM or TSW1250EVM is

Contextual Info: User's Guide SLOU328A – November 2011 – Revised December 2011 AFE5808/08AEVM Rev E Evaluation Module This document assists users in evaluating the AFE5808/08A highly integrated analog front-end devices through the use of the AFE5808/08AEVM Evaluation Module. Included are setup instructions,

CRCW04021001F100

Contextual Info: User's Guide SLOU329A – November 2011 – Revised December 2011 AFE5807EVM Rev E Evaluation Module This document assists users in evaluating the AFE5807 highly integrated analog front-end devices through the use of the AFE5807EVM Evaluation Module. Included are setup instructions, printed-circuit

Contextual Info: User's Guide SLEU114 – May 2011 PCM270xEVM-U This user's guide contains information on the setup, operation, and construction of the PCM270xEVM-U, an evaluation module EVM for digital-to-analog converters (DACs) PCM2704 and PCM2705. 1 2 Contents Description .

Contextual Info: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEA TURES Package Dimensions in Inches mm • High Current Transfer Ratio*, lF=1 mA, IL221,100% Minimum 11232 200% Minimum IL223,500% Minimum • Withstand Test Voltage, 2500 VRMS