2SA13 Search Results

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

2SC3296

Abstract: IC vertical lg
Contextual Info: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SA1301

Abstract: 2SC3280 2SA1301
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1301 POWER AMPLIFIER APPLICATIONS. Unit in mm 2 & 5 MAX. iZS3.3±aZ FEATURES: . Complementary to 2SC3280 . Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C SYMBOL RATING Collector-Base Voltage

Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SC3281

Abstract: 100W AUDIO ic AMPLIFIER 2SA1302
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm i 2 0.5 FEATURES: . Complementary to 2SA1302 MAX . 0 3 .3 ± a s oi —I IQ ' . Recommend for 100W High Flderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25 C

2SA1385-Z

Contextual Info: Transistors SMD Type Silicon PNP Epitaxia 2SA1385-Z TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter

2SA1332

Contextual Info: JMnic Product Specification 2SA1332 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High VCEO APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

2SA1387

Contextual Info: JMnic Product Specification 2SA1387 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・High DC current gain APPLICATIONS ・High current switching applications PINNING

2SA1308

Contextual Info: JMnic Product Specification 2SA1308 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

Contextual Info: 2SA1362 SILICON PNP EPITAXIAL TYPE TRANSISTOR Unit in mm LO W FREQUENCY PO W ER AMPLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • High DC Current Gain : hpg = 120~400 Low Saturation Voltage : VcE sat = —0.2V (Max.) (Ic = -400mA, Ig = —8mA)

SC3383

Abstract: 1943a 2SC3383 2SA1392
Contextual Info: Ordering number: EN 1 9 4 3 A i i SAXYO I 2SA1392/2SC3383 N0.1943A PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute M a x i m a Ratings at Ta=25°C Collector to Base Voltage

2SA1308

Contextual Info: AOK AOK Semiconductor P roduct Specification 2SA1308 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -220F package • Low collector saturation voltage A PP LIC A TIO N S • H igh current sw itching applications PINNING PIN DESCRIPTION 1 Base 2

2SA1012

Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6

2SA1327

Contextual Info: AOK AOK Semiconductor Product Spec ification 2SA1327 Silicon PNP P o w e r Transistors DESCRIPTION • W ith TO-22QFa package • L o w c o lle c to r s a tu r a tio n v o lta g e • H ig h c u rre n t c a p a c ity APPLICATIONS ¿ • S tro b e fla s h a p p lic a tio n s

2SA1387

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1387 Silicon PNP P o w er Transistors DESCRIPTION • W ith TD-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIO NS • High current switching applications

2SA1333

Abstract: nc02
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1333 Silicon PNP P o w e r Transistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • A u d io a n d g e n e ra l p u rp o s e a p p lic a tio n s PINNING see Fig.2 PIN DESCRIPTION

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

2SC3296

Abstract: pnp 500ma 40v 2SA1304
Contextual Info: Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING

smd transistor 2A

Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
Contextual Info: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. 2SA1328 INDUSTRIAL APPLICATIONS U nit in mm • Low Collector Saturation Voltage : v CE(sat)= -0 .4 V (M a x .)a t I c = - 6 A • High Speed Switching Time : tgtg= 1.0/us (Typ.)