2SA1327 Search Results

2SA1327

Contextual Info: AOK AOK Semiconductor Product Spec ification 2SA1327 Silicon PNP P o w e r Transistors DESCRIPTION • W ith TO-22QFa package • L o w c o lle c to r s a tu r a tio n v o lta g e • H ig h c u rre n t c a p a c ity APPLICATIONS ¿ • S tro b e fla s h a p p lic a tio n s

sb 320 toshiba audio power amplifier

Contextual Info: Sb TOSHIBA {D I SC RE TE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO 2SA1327 » F I S C H T E S D 0007314 0 5óC 07314' » T “"3 ^ - / 7 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 10L3M A X.

2SA1327A

Contextual Info: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr

A1327A

Abstract: 2SA1327A
Contextual Info: 2SA1327A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1327A ○ ストロボフラッシュ用 ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −1.0 A) • hFE = 70 (最小) (VCE = −2 V, IC = −8 A)

A1327

Abstract: 2SA1327A
Contextual Info: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1327 U nit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • • • 1CL3MAX. MIN. hpE of 70 at —2V, —8A —10A Rated Collector Current MAX. V cE (sat)of -0.5V at -8 A Ic 20W at 25°C Case Temperature

2SA1327A

Contextual Info: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr

Contextual Info: JbE.rn.i~Condii.ctot L/^ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1327 DESCRIPTION • Low Collector Saturation Voltage: VcE<satr -0.5V(Max.)@lc= -8A

2SA1327A

Contextual Info: TO SHIBA 2SA1327A 2SA1 3 2 7 A T O SH IB A TRANSISTO R STROBE FLASH APPLICATIO NS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO PO W ER AM PLIFIER APPLICATIO NS • • • High DC Current Gain : hjPE-70 (min.) (VCE= —2V, Ic ——1A) Low Collector Saturation Voltage : VCE (sat)“ —0.5V (max.)

A1327A

Abstract: a1327 2SA1327A
Contextual Info: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)

A1327A

Contextual Info: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)

Contextual Info: 2SA1327A TO SHIBA 2 SA1 3 2 7 A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 10±0.3 • • • : hjTE = 70 (min.) (VCe = —2V, IC ——1A) Low Collector Saturation Voltage : VCE (sat)= -0 .5 V (max.)

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1327 STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 1Cl3 MAX. FEATURES: . MIN. hpg of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE sat of -0.5V . 20W at -8A Ic at 25°C Case Temperature

2SA1327

Contextual Info: JMnic Product Specification 2SA1327 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High current capacity APPLICATIONS ・Strobe flash applications ・Audio power amplifier applications PINNING

2SA1327A

Contextual Info: T O SH IB A 2SA1327A T O S H IB A TRA N SISTO R SILICON PN P EPIT A X IA L T Y PE PCT PROCESS 2SA1 3 2 7 A STR O BE FLASH A PPLIC A TIO N S U n it in m m A UD IO P O W E R A M P L IF IE R A PPLIC A TIO N S 10 ±0.3 • H ig h DC C u rren t G a in : hjTE = 70 (m in.)

2SA1327

Abstract: transistor Ic 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max.)@IC= -8A ·High DC Current Gain: hFE= 70(Min.)@ IC= -8A APPLICATIONS ·Strobe flash applications.

2SA1327

Contextual Info: SavantIC Semiconductor Product Specification 2SA1327 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High current capacity · APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications

2SA1327

Abstract: HIGH VOLTAGE POWER PNP TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SA1327 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output