2N6030 TRANSISTOR Search Results

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

TO-225AA

Abstract: 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6030 2N6031
Contextual Info: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications.

2N6030

Abstract: 2N6029 2N5629 2N5630
Contextual Info: SavantIC Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING

2N5630

Abstract: 2N5629 2N6029 2N6030
Contextual Info: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2N5629

Abstract: 2N5630 2N6029 2N6030
Contextual Info: Product Specification www.jmnic.com 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter

2N6029

Abstract: 2N6030 2N5629 2N5630
Contextual Info: Product Specification www.jmnic.com 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter

2N5631

Abstract: 2n6031 2N5629 2n6030 2n5630
Contextual Info: ON Semiconductort NPN High-Voltage Ċ High Power Transistors 2N5630 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. PNP 2N5631 2N6030 • High Collector Emitter Sustaining Voltage — • •

2N6030

Abstract: 2N6029 2N5629 2N5630
Contextual Info: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications

Motorola transistor 388 TO-204AA

Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

2N5629

Abstract: 2N5630 2N6029 2N6030
Contextual Info: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2n6029

Abstract: 2N5630
Contextual Info: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

transistor 2n6038

Abstract: 2N6039
Contextual Info: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 P lastic Darlington C om plem entary Silicon Pow er Transistors PNP 2N 60 35 . . . designed for general-purpose amplifier and low -speed switching applications.

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5629 2N5630 NPN 2N60Z9 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

2N5629 MOTOROLA

Abstract: 2N5629 2n6029 2N6030 2N6031
Contextual Info: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and

2N5630

Abstract: 2n603 2N6031
Contextual Info: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N 5 6 30 H igh-V oltage — High Power Transistors 2N5631 PNP . . . designed for use in high power audio am plifier applications and high voltage switching regulator circuits. 2 N 6 0 30

2N5631

Abstract: 2N6031 MOTOROLA 2N6031 2N6030 2N5630 2N6031 amplifier 2N5631 MOTOROLA MOTOROLA 2N5631 2n6030 transistor 2NS631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 5630 H igh-Voltage — High Power Transistors 2N5631 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 2N 6030 • High Collector Emitter Sustaining Voltage —

2N3773 MOTOROLA

Abstract: 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60
Contextual Info: MOTOROLA SC i D I O D E S / O P T O J 6367255 MOTOROLA "Im SC D F | b 3 b 7 2 S S 0037^3 3 D ( D IO D E S / OPTO 34 C 3793Ó T'33-Ot SIL'CON POWER TRANSISTOR DICE (continued) 2C5631 DIE NO. — NPN LINE SOURCE — PL500.34 NPN PNP D 2C6031 die no. — PNP

Fairchild 2N6488

Abstract: MJ802 MJ4502 2n5301 2N5629 2N3771 2N6030 SE9407 2N3772 2N5630 2N5631
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BYlcmax, POLARITY AND ASCENDINGVcEO Item DEVICE NO. Polarity NPN PNP VCEO V Max @ ic v CE(sall) V A Max Min/Max hFE @ ic A *T MHz Mln(Typ) (Contd) l*D(Max) W TC=25°C Package No. ic = 15.0 A Max Continuous (Cont’d)

2n5872

Contextual Info: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

2N6657

Abstract: 2N5629 2N6658 2N6030 2N6658 V MOS P FVP1 MJ4502 SE9308 2N3772 2N5630
Contextual Info: FAIRCHILD TRANSISTORS POW ER POWER TRANSISTORS BYlcmax, POLARITY AND ASCENDINGVcEO Item ic = DEVICE NO. Polarity NPN PNP VCEO V Max @ ic v CE(sall) V A Max Min/Max hFE @ ic A *T MHz Mln(Typ) (Contd) l*D(Max) W TC=25°C Package No. 15.0 A Max Continuous (Cont’d)

MJ15024 MJ15025

Abstract: 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA MJ15003 MJ15004 2N3772 motorola 2N3055H 2N3773 MOTOROLA
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching lcCont VcEO (sus) Am ps Max V oljs Min 15 60 NPN ^FE PNP 2N3055H 2N3055 2N3055A UJ2955 MJ2955A lc (n M in/M ax Amp 20/70 20/70 20/70 4 4 4 ts tf MS

2N6029

Abstract: 2N5629 2N5630 2N6030
Contextual Info: Datasheet 2 N5629 2 N5630 NPN Central 2 N6029 2N6 03 0 PNP COMPLEMENTARY S I L I CO N TRANSISTORS Semiconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T 0 - 3 POWER CASE Manufacturers of World Class Discrete Semiconductors