2N5118 Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2N4044

Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Contextual Info: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA

dual 1038 Transistor

Abstract: 2N5118 2N5117 2N5119
Contextual Info: E SOLI» STATE di DE | 3Û7SQÛ1 O O I O W T - z 7 - ï. 7 Dielectrically Isolated Dual PNP General Purpose Amplifier FEA TU R ES A B S O LU T E MAXIMUM RATINGS • High Gain at Low Current 0 a = 25°C unless otherwise noted Collector-Base or Collector-Emitter

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

ic hp 4503

Abstract: A 4503 ic hp 4503 2N5117 2N5118 2N5119
Contextual Info: 2N5117-2N5119 Dual Monolithic PNP Transistor A B S O L U T E MAXIMUM RA TIN G S 25° C unless otherwise noted (Note 1) Dissipation at 2 5°C Case Temperature Each side (Note 1) Both sides Derating Factor Each side Both sides Voltage Collector to Base Collector to Emitter

2n5118

Contextual Info: CALOGIC 46E CORP ICGC 1644322 D00D320 fi I> caloric CORPORATION V 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match Tight V b e Tracking

2N5118

Abstract: 2N5117 2N5119 X2N5117 X2N5118 X2N5119
Contextual Info: CALOGIC 4BE D CORP 1A44B5S □□□□BED Û ICGC caloric CORPORATION \J T Z 1 -Z 1 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

BC417

Abstract: 2SA544 2N5124 LOW-POWER SILICON PNP 2N5120 BF541
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 - 25 30 BC350B BC350L 2SA544 2SA544 2SA544 2SA552 KT2091 KT5011 BC807 BC636 92GE77A BF541 2N3857 BC204 TMPA813 2N5119 2N5122 2N5122 2N5122 2N5125 ~~~g~ BC281 A MMBA813S2 MMBA813S2 2SA813S2 ZTX503 ZT183

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

it136

Contextual Info: HARRIS S E M I C O N D S E CT OR S7ED • 4302271 0Q1S7GS ö B H A S g ? •• m •«•_ ./v ,* * . •;• T -tT ^ .3 Differential Am plifiers Continued Bipolar Dual Transistors — PNP a Vbe mV/°C >B1-2 (Note 1) hFE nA (Note 1) M in M ax ' part N U M BER

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

Contextual Info: SE MIC OND UC TO R TECHNOL OGY DSE D | fll3h4Sfi □ " ~ T - cP 9 - c3 7 SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 SILICON DUAL DIFFERENTIAL A M P L IF IE R T R A N S IS T O R S

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0

2N5133

Abstract: 2N6179 2N5121 2N5130 2N6181 2N6178 2n5134 2N6180 2Ns401 2n5296 transistor
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D H SflMatO? -J/ -"<* y -'û ] DDDDODt, _ Page blQITRON ELKTRONIQ #6 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. JOHN J . SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , C OR P.

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.