ic hp 4503
Abstract: A 4503 ic hp 4503 2N5117 2N5118 2N5119
Contextual Info: 2N5117-2N5119 Dual Monolithic PNP Transistor A B S O L U T E MAXIMUM RA TIN G S 25° C unless otherwise noted (Note 1) Dissipation at 2 5°C Case Temperature Each side (Note 1) Both sides Derating Factor Each side Both sides Voltage Collector to Base Collector to Emitter
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2n5117-2n51192n51172n5117/w2n5117/d+52n5118ic hp 4503a 4503 ichp 45032n5119
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2n5118
Contextual Info: CALOGIC 46E CORP ICGC 1644322 D00D320 fi I> caloric CORPORATION V 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match Tight V b e Tracking
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2N5118
Abstract: 2N5117 2N5119 X2N5117 X2N5118 X2N5119
Contextual Info: CALOGIC 4BE D CORP 1A44B5S □□□□BED Û ICGC caloric CORPORATION \J T Z 1 -Z 1 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match
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44b5s0g003e02n5117-2n511910jla+7500ma2n51182n51172n5119x2n5117x2n5118x2n5119
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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2N4044
Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Contextual Info: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA
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3n165t0-993n1663n188+73n1893n1902n40442n40452n41002n48783n191
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dual 1038 Transistor
Abstract: 2N5118 2N5117 2N5119
Contextual Info: E SOLI» STATE di DE | 3Û7SQÛ1 O O I O W T - z 7 - ï. 7 Dielectrically Isolated Dual PNP General Purpose Amplifier FEA TU R ES A B S O LU T E MAXIMUM RATINGS • High Gain at Low Current 0 a = 25°C unless otherwise noted Collector-Base or Collector-Emitter
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2n5117-2n5119dual 1038 transistor2n51182n5117+12n5119
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germanium transistor
Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types
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germanium transistor2n51212n54182n5539+32n5637v2205mm8006
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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BC417
Abstract: 2SA544 2N5124 LOW-POWER SILICON PNP 2N5120 BF541
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 - 25 30 BC350B BC350L 2SA544 2SA544 2SA544 2SA552 KT2091 KT5011 BC807 BC636 92GE77A BF541 2N3857 BC204 TMPA813 2N5119 2N5122 2N5122 2N5122 2N5125 ~~~g~ BC281 A MMBA813S2 MMBA813S2 2SA813S2 ZTX503 ZT183
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bc350bbc350l2sa5442sa552+9kt2091kt5011bc807bc636bc4172n5124low-power silicon pnp2n5120bf541
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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integrau404lsu405lsu406ls841+15ls842ls421ls422ls423ls424npd5564npd5566bfy91imf39582n3050nf5458fairchild e212mp842j9100sst5638
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2N3907
Abstract: 2N3908 2N5121 2N5120 2n5256 1300 NPN 2n5117 2N6088 2N6441 ad816
Contextual Info: I SEMICONDUCTOR TECHNOLOGY, INC. A M P L IF IE R T R A N S IS T O R S Polarity . - • 3131 S .E . J a y Street Stuart, Florida 34997 407 2 8 3 -4 5 0 0 • TW X - 51 0 -953-7511 FAX 4 0 7 -2 8 6 -8 9 1 4 SILICON DUAL DIFFERENTIAL STI Type ^ Powar Dissipation
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n38092n3810a2n3811a2n3838/78+142n39072n39082n40152n40162n40212n40232n51212n51202n52561300 npn2n51172n60882n6441ad816
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Contextual Info: SE MIC OND UC TO R TECHNOL OGY DSE D | fll3h4Sfi □ " ~ T - cP 9 - c3 7 SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 SILICON DUAL DIFFERENTIAL A M P L IF IE R T R A N S IS T O R S
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2sk1358o-2472sk13592sk1362+122sk25632sk25682sk14112sk15352sk14102sk15382sk1358 datasheet2sk20822sk2397-01mr2sk24752sk23702sk2225
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2N5133
Abstract: 2N6179 2N5121 2N5130 2N6181 2N6178 2n5134 2N6180 2Ns401 2n5296 transistor
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D H SflMatO? -J/ -"<* y -'û ] DDDDODt, _ Page blQITRON ELKTRONIQ #6 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. JOHN J . SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , C OR P.
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2n50062n51902n54322n5007+162n51912n54332n50082n51922n54342n50092n51332n61792n51212n51302n61812n61782n51342n61802ns4012n5296 transistor
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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