2N2907 JAN Search Results

2N2907 JAN

Abstract: 2N2907 2N2907 JANTXV 2N2907 JANTX 2n2907 metal can
Contextual Info: 2N2907 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

Contextual Info: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

2N4027

Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

cv8616

Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200

S43 p57

Abstract: MAX232CPE ST7537 home automation system 2N2222 S43/P24/INTP1 2P111 2N2222 P37 bc547b -c27 2N2907
Contextual Info: STARTER KIT ST7537 POWER LINE MODEM By Joël HULOUX SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 II III STARTER KIT FEATURES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N2907

Abstract: 2N6987U JANTX2N6987U
Contextual Info: .OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Ceramic surface mount package • Hermetically sealed

TO-18 amps pnp transistor

Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
Contextual Info: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251

2N2907 TRANSISTOR

Abstract: 2N2907 JAN 2n2907 or similar PNP 2n2907 TRANSISTOR PNP 2N2907 2N6987U JANTX2N6987U
Contextual Info: OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U_ Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • Ceramic surface mount package • Hermetically sealed

BC107-108-109

Abstract: CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

RIFA 100n x2

Abstract: 2N2222 to92 Zener diode 1N4148 rifa 100n 86H-7416 Voltech PM1200 transistor Bc 2n2222 Transistor 2N2222 NPN TO92 2n2907 to92 DE1E3KX472MA5B
Contextual Info: AND8356 Performance of a 300 W, Wide Mains Interleaved PFC Driven by the NCP1601 Prepared by: Joël TURCHI, ON Semiconductor http://onsemi.com APPLICATION NOTE Overview ON Semiconductor to reduce the switching losses without sacrificing the PF and THD performance.

2N2222A motorola

Abstract: 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

2N5416 MOTOROLA

Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

2N2222A plastic package

Abstract: FT3904 2n5857 2N2222A
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SW ITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) (hfe) VOLTS TYPE hFE @ MIN M I N - M A X 'c VOLTS @ (V c e r ) V CE(sat) h lc a h FE O V CEO

2N2369At

Abstract: 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

TIP 22 transistor

Abstract: KR1155 TISP2290 r23 transistor
Contextual Info: MT91600 Programmable SLIC Data Sheet Features January 2004 • Transformerless 2 W to 4 W conversion • Controls battery feed to line • Programmable line impedance • Programmable network balance impedance • Off-hook and dial pulse detection • Ring ground over-current protection

motorola 2N2270

Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Contextual Info: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.

BSW68A

Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

High-Voltage Amplifiers

Abstract: 2N4033 2N4209 transistor 2N4033 2N2369 2N3227 2N3506 2N3724 BCY71 motorola 2N3735
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4