2N294 Search Results

Contextual Info: m 2N2945A \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N2945A is Designed for Low Level, High Speed Chopper Applications. MAXIMUM RATINGS m o < lc P diss 100 mA -20 V 2.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 0JC 435 °C/W CHARACTERISTICS

SEMICOA 2N2946A

Contextual Info: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA Corporaton offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)

2N2946A JANTX

Abstract: 2N2946
Contextual Info: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

Contextual Info: 2N2946A+JANTX Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500p @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2946A

Abstract: 2N2945A 2945A 400D 376 motorola 2N2945 K/2N2945A-T57
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | t3f c,75S4 Rating Collector-Base Voltage Emitter-Base Voltage Sym bol 2N2945A 2N2946A Unit Veco 20 35 Vdc V cB O 25 40 Vdc vebo 25 40 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25°C

2n2945a

Abstract: 2N2345 2N2946A JANTX
Contextual Info: TELEDYNE COMPONENTS BÔE 0 = 1 1 7 ^0 5 D Q G Q bSflU i>r-j 7 - 4 2N2944A 2N2945A 2N2946A and JAN, JTX, JTXV MILITARY APPROVED LOW LEV EL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS AVAILABLE AS JAN, JAN-TX, JAN-TXV GEOMETRY 292 • ULTRA LOW LEAKAGE

2N2946

Abstract: TO206AB 2N2944 2N2945
Contextual Info: MOTOROLA SC -CXSTRS/R » F | b 3 b 7254 a o a a m t s F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R 96D F 82146 D T 'Z JV î — 2N2945 2N2946 M A XIM U M RATINGS Rating Sym bol 2N2945 2N2946 Unit Emitter-Collector Voltage v ECO 20 35 Vdc Collector*Base Voltage

Contextual Info: 2N2948 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.5 h(FE) Max. Current gain.100

2S0571

Abstract: SK3265 2SC3419Y 2SC495 40409 silicon KT919G BFS22A BFS22 2n3053 motorola BLX65E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 40389 2N3053 2N3053S 2N3053S 40392 40407 40407L 40407S 40544 40544L 40544S 40539 40539L 40539S 2N3053A 2N2949 40360 40360L :g~g~s 45 50 40361l 40361S 40408 40408l 40408S 40409 2S0571K 2S0571l

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

2N2945A

Contextual Info: 2N2945A SILICON PNP TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 46 The 2N2945A is Designed for Low Level, High Speed Chopper Applications. MAXIMUM RATINGS 1 = EMITTER Ie 100 mA Vec -20 V Pd i s s 2.0 W @ Te $ 25 0C 2 = BASE Tj -65 °C to +200 0C Ts t g -65 0C to +200 0C

2N2345

Abstract: 2n2945 2N2946 TO206AB
Contextual Info: MOTORCLA SC XSTRS/R F 12e O | ^3^7554 QOflbSfl*! 4 | T-37-33 2N2945 2N2946 MAXIMUM RATINGS Sym bol 2N2945 2N2946 U n it Em itter-C o llecto r V oltag e V e CO 20 35 Vdc C o llector-B ase V olta g e VCBO 25 40 Vdc Em itter-Base V oltag e Vebo 25 40 Vdc R ating

EIA-418D

Contextual Info: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to

Contextual Info: 2N2946A+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500p @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n2945a

Abstract: 2N2946A
Contextual Info: 2N2944A – 2N2946A PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a

2n2946

Abstract: 2945A 2N2944
Contextual Info: TYPES 2N2944, 2N2945, 2N2946. 2N2944A, 2N2945A, 2N2946A P-N-P SILICON TRANSISTORS B U L L E T I N NO. OL- S 6 7 9 5 6 1 . MARCH 19 67 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Guaranteed Offset Voltage • High Emitter-Base Breakdown Voltage

2N2945

Abstract: 2N2946A jan 2n5582 2N2604 2N2605 2N2946 2N3485 2N3486 TO46 new england semiconductor transistors
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I 1H VcEO DEVICE sus TYPE VOLTS 2N2604 45 2N2605 45 2N2944AA 10 2N2945 20 2N2945AA 20 2N2946 35 2N2946AA 35 2N3485 40 2N3485AA 60 2N3486 40 2N3486AA 60 2N3764A 40 2N3765A 60

Contextual Info: 2N2947 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.6.0 h(FE) Max. Current gain.60

Contextual Info: 2N2945A+JANTX Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m’ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200p @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2945A+JANTXV Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m’ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200p @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2946 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2944 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2946A+JANTXV Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500p @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V) @I(C) (A) (Test Condition)