2N2369A ITT Search Results

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

mps 2369 M

Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
Contextual Info: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A

Contextual Info: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A

2N2369

Abstract: 2N2369 equivalent
Contextual Info: MOTOROLA O rd e r th is d o c u m e n t SEMICONDUCTOR TECHNICAL DATA b y 2 N 2 3 6 9 /D Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS R ating Sym bol V alu e U nit C o lle c to r-E m itte r Voltage VCEO 15 Vdc C o lle c to r-E m itte r Voltage

2n2369a

Abstract: 2N2369 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me
Contextual Info: MAXIM UM RATINGS Symbol Value Unit C o llector-E m itter Voltage VCEO 15 Vdc C o llector-E m itter Voltage VcES 40 Vdc Collector-Base Voltage VcBO 40 Vdc Em itter-Base Voltage v EBO 4.5 Vdc 'CIPeak 500 mA 200 mA 0.36 2.06 W att mW ;C .68 6.85 W atts m W ',eC

2N2369 equivalent

Abstract: 2N2369 MA 4108 2N2369A MOTOROLA 2N2368 2N3227 MOTOROLA 2N3227 2N2369A J 2N2369 St 2N2369
Contextual Info: MOTOROLA SC XSTRS/R F M A X IM U M R A T IN G S Symbol Rating Collector-Emitter Voltage Value Vdc 15 20 2N2368,9,A 2N3227 Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 4.5 6.0 'C Peak 500 mA Collector Current — Continuous

2n2222 itt

Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51

2N2222A itt

Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
Contextual Info: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C

BSY87

Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55
Contextual Info: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«

BFR97

Abstract: sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51
Contextual Info: ITT Semiconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h a ra c te ristic s @

BC119

Abstract: 2N1613 fairchild BSY90 BSX20 NPN TRANSISTORS LIST 2N915 itt 2222 bfr36 2N2369A 2N914
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silicon High Speed Saturated Switching Transistors Metal Can T O IS R E FE R E N C E T A B L E For medium speed - see General P u rp ose Section. C H A R A C T E R I S T I C S @ 25"C

BU102

Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«

Contextual Info: Illl = ^ = Illl SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

Contextual Info: Micmsemi w aienow n, m a h a 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 P rogress P o w ered b y Technology Features • • • • 40 Volts 200mAmps Meets MIL-S-19500/317 Collector-Base Voltage 40V Collector Current: 200 mA

BSX21

Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Contextual Info: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

transistor t2a

Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200

2n2222 itt

Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C

2N2222B

Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A

2N2222B

Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812