BDX23
Abstract: 40636
Contextual Info: BDX23/40636 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)95ãè V(BR)CBO (V)7.0 I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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BU102
Abstract: 2N914 transistor bu102 BD663B BDX71 bsx30 BSX26 2N2475 2N915 BSV91
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors Metal Can TO IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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bsx2035250hbsx2635251f+142n91435252d2n236935253b2n2369a35254xbu102transistor bu102bd663bbdx71bsx302n24752n915bsv91
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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BU102
Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
Contextual Info: SG S-ATES Semiconductors T ran sistors-N P N N P N Switching Transistors C ode o < < o w REFERENCE T A B LE lc Range m A Is 13 13 13 BSV90 B SV 9 1 BSV92 BSV95 BSX20 13.5 15 15 50 15 1-100 10-100 1-100 10-800 1-500 B SX 2 6 B SX 2 7 BSX28 BSX30 BSX32 15
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bsv9030801cbsv910802a+15bsv9230803xbsv954774absx2019077bbu102bdx71406362n3055vbdx73bsx27bu100abd663btransistor bu102
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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BU102
Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«
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Germanium drift transistor
Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of
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orporation/464ch-8105germanium drift transistor2n4895+7germanium transistorepitaxial mesatransistor sec tip31ahalbleiter index transistortransistor bd222bd699 equivalentkd 2060 transistor
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2SD556 sanken
Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15
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bdw41bdw46bdt53sm2176+12sm2183bd909bd910sdt98032sd556 sankensdt92072sd556kt819gsdt9202bd184kt818g2n3055-7
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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BSX20 2n2222a
Abstract: BU102 BDX71 2n2222 micro electronics TT 2222 npn P346A ates 2n3055 BU100A FAIRCHILD bu102 2N3055V
Contextual Info: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors Metal Can TO IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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bsx2035250hbsx2635251f+162n91435252d2n236935253b2n2369a35254xbsx20 2n2222abu102bdx712n2222 micro electronicstt 2222 npnp346aates 2n3055bu100afairchild bu1022n3055v
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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