2N2223A Search Results

TIC 2060

Abstract: TIC 2060 D 1/triac tic 2060
Contextual Info: TYPES ¡ w a e y 2N2223, 2N2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . O L - S 7 2 1 1 6 7 8 , M A R C H 197 2 TWO TRA N SISTO R S IN ONE PA CKA G E FOR D IF F E R E N T IA L A M P LIFIER APPLICATIO NS • Medium Power • High Operating Voltage

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

Contextual Info: 2N2223AX MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

2n2223a

Contextual Info: 2N2223A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2223A Availability Online Store

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: S EM E 2N2223A LA B MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

2n2223a

Contextual Info: 2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed

Transistor 78 L 05

Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2947

Abstract: 2N4072 2N1335 2N2453 2N2951 2N1342 2N3729 2N2480 2N2480A 2N2639
Contextual Info: MG 8134693 SEMICOA DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652 2N2652A 2N2223 2N2223A 2N2060 60 60 75 80 45 45 45

Contextual Info: J. Cx , One. t/ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2223A MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 9 5 1 (0,335) 940(0.370) 7 75 (0 305) 8.51 (0.335) FEATURES 1 02 (0 040)

2N2223A

Abstract: TO77 package
Contextual Info: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

TO77 package

Abstract: 2N2223A "Dual npn Transistor"
Contextual Info: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2223

Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
Contextual Info: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N2464

Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
Contextual Info: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH