ADZ12
Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318
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2nl147a2ns7782n1358adtg2100+14cot9408dtg10402ns7882n20752n2075a2n314sadz12dtg-1200dtg-2400germaniumdtg2400adz11dtg12002n513a
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transistor kc 2026
Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Contextual Info: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,
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mil-s-19500/3402n2079aadc-19500/3402n173+122n20792n2772n20802n2080a2n278transistor kc 20262n1099germanium* 2n10992n2082transistor sec 621mil-s-19500 for power line transistorkc 2026
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2N2090
Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607
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ot85306ot85506ot85606ksp1151+12ksp1171ot7a072n20902n2095a2n20222n2040emihus2n20202n20632n20382n20822n2003
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DTG110B
Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .
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2n20822n2082adtg2000mp1550+162n1550a2n1031mp1554mp15582n10322n3124dtg110bto36 packagepnp germanium to36to41 packagegermaniumdtg-2400dtg6002n2081ato41dtg2400
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2N2063A
Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99
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bc141-sbfw24bc637bfs61+162n489sbfx342n18902n871bc44sbc44s-182n2063a2n2082emihus2n2007esr bc632n20192n2097a2n21142n20792n2102 motorola
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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TO36
Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
Contextual Info: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45
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2n1553a2n15542n1554a2n1555+142n1555a2n15562n1556a2n1557mt-368-32nc-2ato362n511to412n15602n20752n15192n15582n1980
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N1560
Abstract: 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50 2N1557
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case | Type Vcao y yceo y ytuo y VCES VCE, y V CURRENT GAIN Min. Max. V h FE V CE @ SATURATION VOLTAGES .] Ic @ Iß y y A A A Yctti Iç Bj.c °c/w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45 45 60 60
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2n1553a2n15542n1554a2n1555+152n1555a2n15562n1556a2n1557ns257t0-182n15602n19822n20752n20812n511to412n511bto363n50
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TO41
Abstract: TO36 Germanium Power Transistors Germanium Power Devices 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1557
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number | Case Type Vcao y y ceo y y tuo y VCES y VCE, V CURRENT G A IN hFE VCE @ Iç Min. Max. V A SA TU R A TIO N VOLTAGES Yctti .] / c @ Ib y y A A Bj.c ° c /w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45
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2n1553a2n15542n1554a2n1555+102n1555a2n15562n1556a2n15572n1557a40rmaniumto41to36germanium power transistorsgermanium power devices
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