AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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DTG110B
Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .
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2n20822n2082adtg2000mp1550+162n1550a2n1031mp1554mp15582n10322n3124dtg110bto36 packagepnp germanium to36to41 packagegermaniumdtg-2400dtg6002n2081ato41dtg2400
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DTG-600
Abstract: DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number CURRENT GAIN Case Type Vc.„ V V ceo MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 45 30 60 45 30 2N4276 2N4277 2N4278 2N4279 2N4280 TO-3 TO-3 TO-3 TO-3 TO-3 30 30 45 45 60 20 20 30 30 45 20 20 25 25 30 30 30 45 45 60
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sdt1909mt-23sdt1910sdt2008+13mt-22sdt2009sdt2010dtg-600dtg-24002n2733dtg-10102n4278dtg-110b2n42772n4280dtg 600dtg-601
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DTG-600
Abstract: DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400
Contextual Info: 6ERMANIUM POWER DEVICES b3E ]> • 3T47375 DGOOSfl1! Gb7 ■ G P D GERMANIUM POWER TRANSISTORS I Type N um ber C U R R E N T G A IN tlF£ Vck @ 1c M ax. V A Case Type VCBO V ycio y MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 4i' 30 60 4Î 30 2N4276 2N4277
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3t47375sdt1909mt-23sdt1910+14sdt2008mt-22sdt2009sdt2010dtg-600dtg-2400dtg-110bdtg110bdtg-1010sc103dtg1102n4276fs20r06xe3dtg2400
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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ADZ12
Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318
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2nl147a2ns7782n1358adtg2100+14cot9408dtg10402ns7882n20752n2075a2n314sadz12dtg-1200dtg-2400germaniumdtg2400adz11dtg12002n513a
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