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    2N 3054 Search Results

    2N 3054 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10106813-054112LF
    Amphenol Communications Solutions 0.5 mm Pitch Hermaphroditic Mezzanine Connector, 50 positions, Standard length with pegs and hold-downs, Half of mated height equals 3.5 mm PDF
    51963-054LF
    Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 12P 12S Vertical Header. PDF
    U95Z3054071141
    Amphenol Communications Solutions QSFP 2X3 COMBO GSKT NO LP PDF
    U95Z3054081141
    Amphenol Communications Solutions QSFP 2X3 COMBO LP AND GSKT PDF
    PSASM2130541TR
    Amphenol Communications Solutions SAS PCIe,12G,Storage and server connector, 68pin, plug, Right Angle, Surface Mount PDF

    2N 3054 Datasheets (80)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3054
    Central Semiconductor NPN SILICON POWER TRANSISTOR Original PDF 89.02KB 2
    2N3054
    Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=55 / Ic=4 / Hfe=25-100 / fT(Hz)=0.8M / Pwr(W)=25 Original PDF 10.74KB 1
    2N3054
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.36KB 5
    2N3054
    API Electronics Short form transistor data Short Form PDF 91.91KB 1
    2N3054
    Central Semiconductor BJT, NPN, Power Transistor, IC 4A - Pol=NPN / Pkg=TO66 / Vceo=55 / Ic=4 / Hfe=25-100 / fT(Hz)=0.8M / Pwr(W)=25 Scan PDF 89.01KB 2
    2N3054
    Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF 73.11KB 2
    2N3054
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 44.25KB 1
    2N3054
    Ferranti Semiconductors Power Transistors 1977 Scan PDF 22.44KB 1
    2N3054
    Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF 22.28KB 1
    2N3054
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N3054
    Great American Electronics Silicon NPN medium power transistor Scan PDF 40.02KB 2
    2N3054
    Lucas Semiconductors Semiconductor Products Scan PDF 49.12KB 1
    2N3054
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 203.97KB 1
    2N3054
    Motorola European Master Selection Guide 1986 Scan PDF 42.83KB 1
    2N3054
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 128.23KB 3
    2N3054
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.7KB 1
    2N3054
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.47KB 1
    2N3054
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.86KB 1
    2N3054
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.05KB 1
    2N3054
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 94.57KB 1
    SF Impression Pixel

    2N 3054 Price and Stock

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    Microchip Technology Inc 2N3054A

    Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N3054A
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    Microchip Technology Inc 2N3054

    Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N3054
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    Microchip Technology Inc 2N3054 655 48 Weeks
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    Central Semiconductor Corp 2N3054 TIN LEAD

    (Alt: 2N3054 TIN LEAD)
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    Glenair Inc 440HS072NF1305-4B

    Circular MIL Spec Backshells BANDING BACKSHELLS
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    Mouser Electronics 440HS072NF1305-4B
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    New Jersey Semiconductor 2N3054A

    Trans GP BJT NPN 55V 4A 75000mW 3-Pin(2+Tab) TO-66 Sleeve
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3054A 23,043 1
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    2N 3054 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU222

    Abstract: MJ425 2N3738 BU208 BU222A MJ3029 2N3583 2N3584 2N3739 2N6211
    Contextual Info: Silicon Power-Metal-Can NPN l C = 1.0 A. 2N 3583 2N 3738 2N 3739 l e = 2.0 A. 2N 3584 M J3026 MJ3027 2N 3585 2N 4240 v CEO V olts hp£ @ M in./M ax. •c Am p. v CE sat @ 'C V o lts Max. Am p. fT M Hz PD Watts Case PNP 2N 6420 2N 6 4 2 4 2N 6425 175 225 300


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    2n35832n64202n37382n6424+112n37392n64252n35842n64212n6211mj3026bu222mj425bu208bu222amj3029 PDF

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    o-128o-117o-12940pep+1380pepot-32o-66pbd 3055bd 139 140bd npn transistorsbdx 241bd139-62n3055bd1393055 npnbd 139 nto128 PDF

    2N6315

    Abstract: 2n3054a
    Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr


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    2n35832n49112n56612n5665+32n63152n63732n3054a PDF

    Schalter

    Abstract: 3055 TO-3P 2N 3055 2N3055
    Contextual Info: Typ f Vcc Pin po ut ßVCBO BV c e O Gehäuse t'rpe _ 2N 5941 2N 5942 2M 5943 f~ rrin IV Hz 30 30 250 28 28 15 50 m A 40PEP 80PEP 7 dB 65 65 40 package 35 35 30 D IA-4L D IA-4L


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    40pep80pepot-32o-66p+5schalter3055to-3p2n 30552n3055 PDF

    je 3055

    Abstract: ST 3055 3055 la boitier to3 2N 3055 BDX14 BDX18 2N3054 pacb 3055 pnp
    Contextual Info: PNP POWER TRANSISTO RS T R A N S IS T O R S D E P U IS S A N C E PN P Complementary of 2N 3054, 2N 3055 Complémentaires des 2 N 3 0 5 4 , 2 N 30 55 TECHNOLOGICAL DATA D O N N E E S T E C H N O L O G IQ U E S - General purpose Material : Silicon Structure : Epitaxial base


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    je 3055st 30553055 laboitier to3+62n 3055bdx14bdx182n3054pacb3055 pnp PDF

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    2n30542n30552n3055sd2n3439+92n34402n37132n37142n37152n37162n3740pnp 2sdt1p61bd224 PDF

    2N3054A

    Contextual Info: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s


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    2n3054arad8-89 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    BDX14

    Abstract: BDX 14
    Contextual Info: * BDX 14 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR A N SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE S Compì, of 2N 3054 ^P re ferred device D isp o sitif recommandé - LF large signal power amplification A m plification B F grands signaux de puissance


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    cb-72bdx14bdx 14 PDF

    2N3738

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3736 2N6049 2N6420 2N6421 2N6422
    Contextual Info: Power Transistors a v ii -j K Jy a TO-66 Case TYPE NO. •c A PNP NPN 2N3054 Pd (W) bvc b o bvceo (V) (V) ie (A) hFE VCE(SAT) ® «e (V) (A) MIN MIN MIN MAX 4 .0 25 90 55 25 1 50 0 .5 1.0 0 .5 0 .8 0.8 MAX MAX h {MHz) MIN 2N 3054A 2N6049 4 .0 75 90 55


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    2n30542n3054a2n60492n3583+72n64202n35842n64212n3s852n64222n37382n3736 PDF

    SAP 17 TRANSISTOR VOLTAGE AND AMP

    Abstract: 2N3054 pirgo 2N3054 SAP 17 TRANSISTOR Pirgo Electronics 104351-5
    Contextual Info: A P I ELE CTR ON IC S INC 07 » F 1 00435=12 000G055 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N 3054, 4 AMP NPN SILICON SINGLE-DIFFUSED POWER TRANSISTOR . High D issipation, P d = 29W 075 050 - 3 6 0 MIN High V oltage, BVCex = 9 0 V a l l d im e n s i o n s in i n c h e s


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    2n3054sap 17 transistor voltage and amppirgo 2n3054sap 17 transistor+2pirgo electronics104351-5 PDF

    h21e

    Abstract: 3055 pnp transistor 3055 TRANSISTOR BDX 14 Transistors 2n3054
    Contextual Info: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES NPN planar power transistors chips Transistors de puissance planar (pastilles) Type Type V CBO (V) V CEO (V) 'cm (A) V CE (V) h21E !C (m A ) min max J.2N 2890


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    h21e3055 pnptransistor 3055transistor bdx 14+2transistors2n3054 PDF

    2N3054

    Abstract: Emetteur 2N 3054 BDY 276 3054
    Contextual Info: 2f\l 3 0 5 4 * BDY 71 NPN S ILIC O N TR A N S IS TO R S , HOMOBASE T R A N S IS TO R S N P N S IL IC IU M , H O M O B ASE 2N 3054 compì, of B D X 14 Preferred device D is p o s itif re com m andé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance


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    cb-722n3054emetteur2n 3054+2bdy 2763054 PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    cb-6914f4gd 5038 transistor horizontalamplificateur audio a base de transistor+8transistor 2n 892 x1amplificateur bftransistor st tyn 616equivalent of transistor bul 38 dabd 317 schematransistor 3055 out hvesm214transistor bdy 58 PDF

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    533xcd01534xcd02535xcq012n1063+62n1074233a535x184 324 diode2n53832n3055c PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


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    sdt 9202bdx 338bu 450 bdx PDF

    2N3055 TO-3

    Abstract: pt 35c 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 2n6254
    Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.


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    ito-391-ito-220o-661ito-2201+12o-2201ito-31130x1302n3055 to-3pt 35c2n14822n30542n3442n52982n57862n64782n6254 PDF

    2n5298 40629

    Abstract: npn darlington 400v 15a 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 2N5415
    Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. Py « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


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    ito-391-ito-220o-661ito-2201+12o-2201ito-31130x1302n5298 40629npn darlington 400v 15a2n14822n30542n3442n52982n57862n64782n5415 PDF

    2N3065

    Abstract: BD278 2N5295 2N3055 ct-88 2N1482 2N3054 2N344 2N5298 2N5786
    Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.


    OCR Scan
    ito-391-ito-220o-661ito-2201+13o-2201ito-31130x1302n3065bd2782n52952n3055ct-882n14822n30542n3442n52982n5786 PDF

    2n1478

    Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
    Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150


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    2n3382n339a2n3402n340a+162n3412n341a2n3422n342a2n3432n343a2n14782n22042n39162n18992n22022n42442n10182n2951to-532n1886 PDF

    2n5578

    Abstract: 2N210 2N5298 2N1482 2N3054 2N344 2N5786 2N6478 ITO-220
    Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.


    OCR Scan
    ito-391-ito-220o-661ito-2201+11o-2201ito-31130x1302n55782n2102n52982n14822n30542n3442n57862n6478 PDF

    tt 2194

    Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
    Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs


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    2n54152n5416tt 2194ltls+62n30542n2243aa2nbux542n21922n2195 PDF