2N 2222A TRANSISTOR Search Results

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

JANTXV2N2222AUA

Abstract: transistor s71 2N2222AUA
Contextual Info: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed

JAN2N2222A

Abstract: Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2222A 2N2907A HCT700
Contextual Info: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • C e ra m ic surface mount package • Miniature package to minimize circuit board area • Electrical performance sim ilar to 2 N 2222A and 2N 2 9 0 7 A

Contextual Info: 61096 Features: • • • • JOIff- G E N E R A L P U R P O S E N P N T R A N S IS T O R (2N 2222A ) OPTOELECTRONIC PRODUCTS DIVISION Applications: Hermetically sealed Rugged package-able to withstand high acceleration load TO-18 package MIL-PRF-19500 screening available

2907A EQUIVALENT

Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
Contextual Info: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222

BSW21A

Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
Contextual Info: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200

transistor 2222a

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

2N2217

Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Contextual Info: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA

2222a NPN

Abstract: 2222 NPN NPN 2N 2219 2222A npn 2907A 2n h 2222a cc 3053 npn 2222 NPN 2904 jedec Package TO-39
Contextual Info: JEDEC TRANSISTORS continued > ~ ir w o > Ui o > a UJ h< cc € X CO ^E c E UJ Ll. < > X CO X CD E _u > _c a. in V) UJ o E o X) o o fT min (MHz) PO LA R IT Y TYPE General purpose amplifiers and switches (»„„„„«u ID 01 II (0 t - LL1 O < CJ < O. @

BFR99

Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200

2n h 2222a

Abstract: 2N 2222 2221A T018 NPN 2N 2219 BSX 61
Contextual Info: NPN Silicon Transistors N P N Silico n Planar Transistors fo r m edium level switching Characteristics at T ;lnlj = 25 ° C M a x im u m ratings Case B V C fO V B V C SO V b v £SO V PT O T > Î T ype pr o r 2 W W hF iF 1 0 V / 1 0 m A ) ^FE^CE^C1 (V/m a)

2N2475

Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0

BFR99

Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
Contextual Info: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# »»lajgraoraotss SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25 50 50 50 200

2N3707 DIODE

Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.

BFR38

Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022

2219a

Abstract: 2218A 2n h 2222a cc 3053 2N4047 npn 2907A transistor 2N 2297 transistor 3504 npn 2222 NPN
Contextual Info: JEDEC TRANSISTORS continued > o LÜ O > a LU I< oc t/t e X «O e < _u o X SO C E ÜJ Ü. S' < e o > X (O £ +r-e • lA Ui O > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU a. >1- fT min (MHz) High speed saturated switches f B

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

TRANSISTOR TO-106

Abstract: transistor 2222a to-92 Transistors 2N 2N 2905a pnp transistor
Contextual Info: 33E D METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • 53fl33=ï4 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO Volts Device min VCBO VEBO Volts Volts min min hFE at bias IC VCE ICM PTA PTC mA Volts mA mW W A<A max max 1.2 0.010 min/max max max ICBO VCE sat

BFS43

Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
Contextual Info: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction

SY 360 05

Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns