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    BFS38A Search Results

    BFS38A Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFS38A
    Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF 34.6KB 1
    BFS38A
    Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF 68.56KB 2
    BFS38A
    Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF 32.93KB 1
    BFS38A
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 97.63KB 1
    BFS38A
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 32.3KB 1
    BFS38A
    Unknown Shortform Electronic Component Datasheets Short Form PDF 56.48KB 1
    BFS38A
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.11KB 1
    BFS38A
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 168.9KB 1
    BFS38A
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 68.79KB 1

    BFS38A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abcy79 equivalent2n3053 equivalentbcy78 equivalent2n2905a equivalentf025 PDF

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63a2n4427 equivalentzt ferranti2n2369 equivalent2n2708bzx88-c4v3diode baw67f025ic marking z7j 2n2369marking g5 PDF

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63abc239c equivalentbc550c equivalentbc237a equivalentbc238b equivalentbc548c equivalentbc238a equivalentbc108b equivalentbc549c equivalentbc183 equivalentbc237b equivalent PDF

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63amarking w4 npn2n2475bfs37f025marking bs PDF

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+7bs9302bfs36a2n929baw63abss56f025ic marking z7 PDF

    BC107 equivalent transistors

    Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+6bs9302bfs36a2n929baw63abc107 equivalent transistors2n2475 PDF

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+11bs9302bfs36a2n929baw63abc109 transistor equivalent listnpn transistor w62n2484 equivalent transistorstransistor equivalent table bc109transistor bc109ztx341f021 PDF

    BC140 equivalent

    Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+8bs9302bfs36a2n929baw63abc140 equivalent2n3053 equivalent2n4036 equivalentequivalent to bc177 PDF

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+12bs9302bfs36a2n929baw63af025baw68marking z9f008bzx88-c5v12n2475bfs46abzx88-c5v6 PDF

    2N2475

    Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
    Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0


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    bfs38abfs38bfs39bfs40a+10bfs40bfs41bfs362n930bfs372n26052n2475bfs46bfs36abfs42 PDF

    2N2369 SOT-23

    Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
    Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


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    baw63bzx88-c10bzx88-c11bzx88-c12+16bzx88-c13bzx88-c15bzx88-c16bzx88-c18bzx88-c20bzx88-c222n2369 sot-23baw66diode marking w8bzx88-c7v5baw* diodew6 marking sot-23baw 92z6 diodebzx88c8v2baw63a PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


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    bfs96bfs97bfs98-150t+12bfs59-61ztx510bsv33bfs362n930bfs372n24752n4127zt180zt181zt182zt183 PDF

    ZT1483

    Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
    Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    ztx330ztx331bcw20bcw22+132n37072n929ztx107ztx108ztx1i09bc107zt1483zt1701bcw23zt21202n2475bcw21bc108 PDF

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


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    bsy95aztx310bsv23ztx311+14bsv24ztx312bsv25ztx313bsv26ztx314transistor t2anpn transistor 2n2222ast 2n 2907azdt- 5vbsv27j 2n2369ztx312 dataztx313 data PDF

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    ztx330ztx331bcw20bcw22+122n37072n929ztx107ztx108ztx1i09bc1072n3707 diode2n40582n2475bc107 equivalentcompetitivebc108 PDF

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


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    bfs362n930bs9365baw63+12bs9302bfs36a2n929baw63abfy52 equivalentic marking z7marking c1s2n22222n24752n2938f0252n2369 equivalent PDF

    transistor w4

    Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


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    bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63atransistor w4bss56f007 amplifierstransistors for uhf oscillators2n2475f021f025ic marking z7marking z6rf marking y2 PDF

    BZX88C

    Abstract: BZX88 BZX88C20 2N3053 equivalent 2N929 2N930 bcy59 equivalent BAW63A BFS36 BS9302
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


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    bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abzx88cbzx88bzx88c202n3053 equivalentbcy59 equivalent PDF

    N2222

    Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
    Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


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    bfs59bfs60bfs61bfs96-98+12bfx84bfs362n930bfs372n2605bfs36an22222n2222n222aztx326bfy50bfy51 PDF

    BC140 equivalent

    Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


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    bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abc140 equivalent2n4427 equivalent2n4036 equivalent2n2270 equivalent2n3866 equivalent PDF

    2N4041

    Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
    Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n40412n4429bfs982n36322n4127j 2n2222azt80 PDF

    BC107 equivalent transistors

    Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


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    bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abc107 equivalent transistorsbc140 equivalentbcy71 bs2n3053 equivalentmarking 1801 PDF

    MPSA42 equivalent

    Abstract: MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent ZTX327
    Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­


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    ztx327bf196pbs9365bzx88-c5v1+14bft272n2484bzx88-c5v6bss47ztx342mpsa42 equivalentmpsa43 equivalentmpsa92 equivalentztx320 equivalentztx542 equivalentztx342 cdbzx88cbf493ztx541 equivalent PDF