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2G229 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2G229		Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	199.55KB	2
2G229		Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.09KB	1
2G229		Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.15KB	1

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KEMET Corporation


KEMET Corporation C052G229C2G5CR Multilayer Ceramic Capacitors MLCC - Leaded 200V 2.2 pF C0G 0.25 pF LS=5.08 mm LDD Mil C0G PRF20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C052G229C2G5CR					1 $5.05 10 $3.54 100 $2.62 1000 $2.60 10000 $2.60	Get Quote
KEMET Corporation C052G229C2G5CP Multilayer Ceramic Capacitors MLCC - Leaded 200V 2.2 pF C0G 0.25 pF LS=5.08 mm LDD Mil C0G PRF20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C052G229C2G5CP					1 $5.05 10 $3.54 100 $2.62 1000 $2.60 10000 $2.60	Get Quote
KEMET Corporation C052G229C2G5CS Multilayer Ceramic Capacitors MLCC - Leaded 200V 2.2 pF C0G 0.25 pF LS=5.08 mm LDD Mil C0G PRF20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C052G229C2G5CS					1 $5.27 10 $3.70 100 $2.73 1000 $2.71 10000 $2.71	Get Quote
KEMET Corporation C052G229B2G5CA Multilayer Ceramic Capacitors MLCC - Leaded 200V 2.2 pF C0G 0.1 pF LS=5.08 mm LDD Mil C0G PRF20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C052G229B2G5CA					1 $11.76 10 $8.85 100 $7.15 1000 $6.52 10000 $6.52	Get Quote
KEMET Corporation C052G229B2G5CR Multilayer Ceramic Capacitors MLCC - Leaded 200V 2.2 pF C0G 0.1 pF LS=5.08 mm LDD Mil C0G PRF20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C052G229B2G5CR					1 $11.76 10 $8.32 100 $7.15 1000 $6.46 10000 $6.46	Get Quote

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2G229 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N1143 Abstract: 2N1142 TI3030 TI3028 2N1141 TI3027 TI3031 2N458A germanium transistors PNP 2N455A Contextual Info: Germanium Transistors Type Case C o Maxim um R atings at 25°C amb. C haracteristics S P E C IA L 11 No. « a> o » O FE A TU R ES A - > ,- V CB V CE V EB V V V •c A Ptot W fc A h FE a Min. fT Max. V C E (S A T A -1 r 1-	OCR Scan	2N524 2N525 2N526 2N527 2N1141 2N1142 2N1143 2N456A TI3030 TI3031 TI3028 TI3027 2N458A germanium transistors PNP 2N455A	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
MP2144 Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT	OCR Scan	NPN110. 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA MP2144 MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132	PDF
2N1029 Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N1029 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A	PDF
MP2143 Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Newmarket Transistors Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu	Original	ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
MP2143A Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF