2SC4317 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE A M PLI FIE R APPLICATIONS. U n i t i n mm +0.5 2 .5 -0 .3 . L o w N o i s e F i g u r e , H i g h Gai n . . N F = 1 . ldB, I S 2 1 e |2= 1 3 d B f=lGHz MAX IMU M RATINGS (Ta=25°C) CHARACTERISTIC

2SC4317

Abstract: transistor c 3856
Contextual Info: 2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Contextual Info: T O SH IB A 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 • Low Noise Figure, High Gain. . N F = l.ld B , |S21e|2= 13dB f = 1GHz +0.25 1.5-0.15. HO ÖÖ

2SC4317

Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 - 0 . 3 • Low Noise Figure, High Gain. . NF = l.ld B , |S2le |2= 13dB f = 1GHz + 0 .2 5 1 .5 -0 .1 5 , HO

491 marking transistor

Abstract: 2SC4317
Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lGH z M A X IM U M RATINGS (Ta = 25°C)

287-1 MAG

Abstract: 2SC4317 BT 1201 ic
Contextual Info: 2SC4317 TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.5 2 .5 -0 .3 + 0.25 Low Noise Figure, High Gain N F = l.ld B , |S2lel2= 13dB f=lGHz k1-5-°-15>i I- MAXIMUM RATINGS (Ta = 25°C)

sem 2106

Abstract: TRANSISTOR 3856
Contextual Info: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25

Contextual Info: TOSHIBA 2SC4317 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • Low Noise Figure, High Gain • NF = 1.1dB, IS21el2 = 1 3 d B f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain • N F = l.ld B , |S21el2= 13dB f=lG H z + 0.25 . 1 .5 -0 .1 5

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: IN S E R T IO N G A IN NF d B DC CURRENT G A IN |S Z l e | 2 (d B ) g 8 hFE 8 8 COLLECTOR COLLECTOR CURRENT CURRENT Ic Ic (mA) (» A ) Ï o ’ " Ü1 "l OS d T R A N S IT IO N FREQU ENCY fT (G H z) IN S E R T IO N GA IN 8 < OUTPUT C A PA C ITA N C E Cob ( p F )

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm + 0.5 2.5 - 0 3 Low Noise F igure, H igh G ain. + 0 25 1 5 - 0 .1 5 , N F = l.ld B , |S 2 lel2 = 1 3 d B f= lG H z M A X IM U M

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2SC4470

Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
Contextual Info: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2SC2499

Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
Contextual Info: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)

2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation

2SC4326K

Abstract: 2SC4300 2SC4311 2-4F1C 2SC4313 2SC4302 2SC4314 2SC4328 2SC4337 2SC4338-Z
Contextual Info: - 196 - Ü X & fe T a = 2 5 lC , * E P Í á í c = 2 5 cC m & ?± xñ £ VcBO V'cEO Pc lc ( D O 1 P c* (max) (V) (A) (V) (W) (W) M Xi ft ( T a = 2 5 cC ) VCB (V) (uh) (min) OEPÍátypfil] ., hp I c BO (max) Vc e (V) / i \ Tr (max) (V) Ic / I e (A) / t\

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)