2SC4004 Search Results

2SC4004

Contextual Info: Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V VCES 900 V VCEO 800 V

BL 05A

Abstract: 2SC4004
Contextual Info: Pow er Tra n sisto rs 2SC4004 2SC4004 Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it ! mm • Features 10 .2 m a x . • H igh c o lle c to r-b a s e v o ltag e 4 .4 m a x . 2.9m ax. 5.7 m a x .

2sc4004

Contextual Info: Power Transistors 2SC4004 2SC4004 Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching • Features Unit ! mm 4.4max. 2.9max. 10.2max. 5.7max. • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o lta g e V cbo

2SC4004

Contextual Info: SavantIC Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package · Wide area of safe operation ASO ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage highspeed switching applications

2SC4004

Contextual Info: Inchange Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・ Wide area of safe operation ASO ・High-speed switching ・High collector to base voltage VCBO APPLICATIONS ・For high breakdown voltage highspeed switching applications

2SC4004

Contextual Info: Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V VCES 900 V VCEO 800 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SC4004

Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of foward current transfer ratio hFE ・ Wide area of safe operation ASO ・High-speed switching ・High collector to base voltage VCBO

2SC4004

Contextual Info: Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 900 V Collector-emitter voltage (E-B short)

2SC4004 transistor

Abstract: 2SC4004
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 Parameter Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open)

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

D4242

Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
Contextual Info: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773