2SC4359 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

SC-92

Abstract: 2SC4359
Contextual Info: Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)

2SC4359

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

d5050j

Abstract: 2SC4340 MP40 2SC4382 2SC4387 2SC4392 2SC4353 2SC4347 2SA1671 2SC4354
Contextual Info: - 198 - Ta=25‘ C , * E p f i T c = 2 5 £C m 2SC4339 % ?± an 2SC4339—Z 2SC4340 m £ am & VcBO V’cEO (V) (V) (W) (A) « Pc* ÎC (D C } VcB (V) (il (W) 9 1 100 1 9 1 100 1.3 8 1 60 1.3 10 1 80 5 1.5 25 0. 5 1 00 5 1.5 25 100 8 1.5 30 100 10 1.5 HS PSW/PD

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SC2482

Abstract: 2SC2283 k 3496 2SC3393 2sc2562 2SC3112 2SC3124 2SC945 2sc2785 h 2SD1431
Contextual Info: - 164 - m € T y p e No. it £ Manuf. ft = SANYO M *£ TO S HIBA 1e NEC HITACHI tL * ± a F U J ITSU fé T MATSUSHITA ft 2SD1433 2SC2482 2SC3478 2SD1610 2SC2632 2SC3269 H ft ft 2SC2482 2SC3209 2SC4743 2 SC1573A 2SC3269 h n * 2SC 3467 ' = * 2SC 3468 * 2SC 3469

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691