2SC3067 Search Results

Contextual Info: i i SAWYO F 2SC3067 N0.978B NPN E p i t a x i a l Planar S i l i c o n Transistor Dif fe r e n t ia l Amp A p p l i c a t i o n s "’V Features • Excellent in thermal equilibrium and suited Jttfr in " •?% differential amp%K W;V- |! |: . Low noise. /.

2sc3067

Contextual Info: 2SC3067 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)120 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC3067

Contextual Info: i i SAWYO F 2SC3067 N0.978B NPN E p i t a x i a l Planar S i l i c o n Transistor Dif fe r e n t ia l Amp A p p l i c a t i o n s "’V Features • Excellent in thermal equilibrium and suited Jttfr in " •?% differential amp%K W;V- |! |: . Low noise. /.

2SC3067

Contextual Info: Ordering number : 9 7 8 B NPN Epitaxial Planar Silicon Transistor 2SC3067 Differential Amp Applications

2SK332

Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
Contextual Info: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SC3096

Abstract: 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3056A 2SC3057 2SC3058A
Contextual Info: - 144 - 13=25*0, *EP(ÎTc=25t; M ¿ ít 2SC3056 £ 1 V'CBO V’ cEO lc(DC) Pc Pc* ICBO (max) (V) (V) (A) (W) (W) (uk) VcB (V) M W 1SÈ , . .»F Unin) (max; (Ta=25tC ) OEPiâtypig] / «BEVadw V’ CE (V) (max) (V) Ic/ÎE (A) (V) le (A) 1b (A) SW Reg/DDC 450

microphone low-noise ti

Abstract: 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2SK1646 2sc3067 2SK2091
Contextual Info: GaAs MESFETs Absolute maximum ratings Package type Device 2SK1646 . CP4 Applications Vos V Vgs (V) Id (mA) Electrical characteristics (Ta = 25 -C) loss @ Vds Pr (mW) 91 . loss (mA) NF @ Vds • I d lYfsl @ Vds • I ds Vds , (V) |Yfe| (mS) Vos

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

NEC 2706

Abstract: 2SC1815 2SC2283 KA 2717 2SC1971 2SD810 2SC3359 nec 2741 2SC2645 2SC3012
Contextual Info: - m. % Type No. 2SC 2706 / 2SC 2SC 2SC 2SC 2SC 2 SC 2SC 2SC 2SC 2710 ^ 2711 2712" 2713 " 2714 _ 27 15 " 2716 — 2717 y 2718 « Manuf. = b $ SANYO TOSHIBA 2SC3182N M 'S . 2SD1047 % 3Ê 2SD1935 m NEC 2SC3012 2SC4639 2SD810 2SC2281 2SC1623 K 2SC2814 2SC2814

2SC306

Abstract: 2SC3067 2sc306 transistor Sanyo 2027A
Contextual Info: SA N Y O S E M I C O N D U C T O R CORP 32E D 7^707^ rJ -,' *+,rr~ 'i •v . - r' i ' * . -.r' ■ 1» ^ 0000044 7 ■ - N P N E p itaxial P lan ar S ilic o n C o m p o s ite T ra n s is to r 2029A Differential Amp Applications 978B Features . Excellent in t hermal e q u i l i b r i u m