2027A Search Results

2SK332

Abstract: TRANSISTOR IFW 2027A 100S 956c
Contextual Info: — • * i . wi u u uuuu i J D fcfad T-27-27 Ì- * - ' - 3 k L, _r \ ‘r^VeV; ytrj* ' N -C h an n el Junction Silicon C om posite FET 2027A Differential Amp Applications 956C Features • Excellent in thermal equilibrium and especially suited fo r first-stage differential amp o f D C amp

2SK332

Abstract: Scans-00159775 DS-17 SANYO
Contextual Info: — '•' r~'J-, Ì-*- ' - • < 1 1 U 1u uuuuu I J p T-27-27 VflYaTV k L,_r 3 \ ‘r^VeV; ytrj* btffl ' N -C h an n e l Junction Silico n Com posite FE T 2027A Differential Amp Applications 956C Features • Excellent in thermal equilibrium and especially suited for first-stage differential amp of DC amp

DEA252450BT-2027A1

Contextual Info: 1/2 持蚊薮頭揮宥陀襖匂 清兩才2.4GHz W-LAN喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA252450BT-2027A1 侘彜・樫雁 4 0.2±0.1 0.25±0.15 3 2±0.2 1 1.0max. 0.5±0.2 2.5±0.2 2 Terminal functions 1 IN 2 GND 3 OUT 4 GND Dimensions in mm 容呪咫泡窮揃医夕劔

2SK333

Abstract: 2028A 2064 fet Sanyo Sanyo TV cm 25
Contextual Info: SANY O S E M I C O N D U C T O R CO RP 32E D 7 cn 7 Q 7 b OGOflflflfl S T '2 7 ^ 7 H|l N -C h an n el Ju nctio n Silicon C om posite FET 2027a Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range

Contextual Info: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA252450BT-2027A1 SHAPES AND DIMENSIONS 4 IN GND OUT GND 0.2±0.1 0.25±0.15 3 1 2 3 4 2±0.2 1 TERMINAL FUNCTIONS 1.0max. 0.5±0.2 2.5±0.2 2 Dimensions in mm

LDM2357SRA

Abstract: 2027A
Contextual Info: ood NO.：QB/SPS 73 PS 2027A SPECIFICATIONS NAME: Φ5.0 TYPE: LDM2357SRA DOT MATRIX SHENZHEN DITELONG INDUSTRIAL CO.,LTD. SHENZHEN CANDELA ELECTRONIC CO.,LTD. SHENZHEN SUCCESS PHOTOELECTRONICS CO.,LTD SHENZHEN OFFICE Add: Room 1911,Zhongwin Science & Techn.Bldg,Bagua 3th Rd.Bagualing Industry Zone Shenzhen,China

Contextual Info: 17/28 Multilayer Band Pass Filters, DEA Series DEA252450BT-2027A1 SHAPES AND DIMENSIONS 2.5±0.2 TERMINAL FUNCTIONS 1.0max. 1 2 3 4 0.25±0.15 4 2±0.2 3 IN/OUT OUT/IN GND GND 0.2±0.1 1 0.5±0.2 2 Dimensions in mm RECOMMENDED PC BOARD PATTERN Land Solder resist

DEA252450BT-2027A1

Contextual Info: 1/2 積層チップバンドパスフィルタ Bluetooth & 2.4GHz W-LAN用 RoHS指令対応製品 DEA シリーズ DEA252450BT-2027A1 形状・寸法 4 0.2±0.1 0.25±0.15 3 2±0.2 1 1.0max. 0.5±0.2 2.5±0.2 2 Terminal functions 1 IN 2 GND 3 OUT 4 GND

DEA252450BT-2027A1

Contextual Info: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA252450BT-2027A1 SHAPES AND DIMENSIONS 4 0.2±0.1 0.25±0.15 3 2±0.2 1 1.0max. 0.5±0.2 2.5±0.2 2 Terminal functions 1 IN 2 GND 3 OUT 4 GND Dimensions in mm

CMZ5945B

Contextual Info: DEMO MANUAL 2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC 4364 surge stopper with ideal diode in a 12V, 1A application. DC inputs of up to 80V and transients to 250V are limited to just 28.7V at the output. Sagging and reverse-polarity

Contextual Info: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA252450BT-2027A1 SHAPES AND DIMENSIONS Top view Bottom view 1 2 4 0.2±0.1 0.35±0.15 0.5±0.2 0.9±0.1 2±0.2 2.5±0.2 3 Terminal functions 1 IN

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

Contextual Info: TLE2027ĆQ1, TLE2037ĆQ1, 2027AĆQ1, TLE2037AĆQ1 EXCALIBUR LOWĆNOISE HIGHĆSPEED PRECISION OPERATIONAL AMPLIFIERS ą SGLS202 − OCTOBER 2003 D Qualification in Accordance With D D D D D Available in Standard-Pinout Small-Outline AEC-Q100† Qualified for Automotive Applications

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

Contextual Info: TLE2027ĆQ1, TLE2037ĆQ1, 2027AĆQ1, TLE2037AĆQ1 EXCALIBUR LOWĆNOISE HIGHĆSPEED PRECISION OPERATIONAL AMPLIFIERS ą SGLS202 − OCTOBER 2003 D Qualification in Accordance With D D D D D Available in Standard-Pinout Small-Outline AEC-Q100† Qualified for Automotive Applications

yg 2025

Abstract: transistor bc 930 2SA929 2SA930 2SC1570
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D • TTTTOTb OOOflöaO 4 B T -2 7 - / S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications The 2SA929, 930 are transistors for very low noise AF amp. They are especially suited for use in the first stage of equalizer amp. in high-grade stereo sets.

wj 5 77

Abstract: 2SC3985 DDD3710 PA 2027A a 1201 sanyo
Contextual Info: SA N Y O SEMICONDUCTOR CORP r-3 3-, 2SC3985 2041 N P N P l a n a r S i l i c o n D a r li n g t o n T r a n s i s t o r Driver Applications 2218A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain

mpc 1237

Abstract: transistor 2sd 511 transistor d325 TRANSISTOR C875 c537 transistor 2SD325 2SC693 2SC536D 2SC693E 2SB511
Contextual Info: SANYO SEMICONDUCTOR CORP 1BE D I TTTTDTh Q G 0 H 0 ci3 T-'is-Op 2SD325 N P N / pnp Triple Diffused Planar Silicon Transistors 201OA Low Frequency Power Amp Applications 2SB511 398F 5 Watts AF Power amplifier output use. There are complementary pair. :2SB511