2SD3 Search Results

2SB507

Abstract: 2SD313
Contextual Info: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier

2SB511

Abstract: 2SD325
Contextual Info: Inchange Semiconductor Product Specification 2SB511 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD325 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

2sj514

Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Contextual Info: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

2sd313

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

2sd315

Abstract: 2SB509
Contextual Info: SavantIC Semiconductor Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION Fig.1 simplified outline (TO-66) and symbol

2SD381

Abstract: 2SB536 2SB536 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING

2SD362

Abstract: Ic 2050
Contextual Info: SavantIC Semiconductor Product Specification 2SD362 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-base voltage: VCBO=150V ·Collector current :IC=5A ·Collector dissipation : PC=40 TC=25 APPLICATIONS ·For B/W TV horizontal deflection

2SB511

Abstract: 2SD325 transistor power 5w
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB511 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -35V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -1.5A ·Complement to Type 2SD325

2SD366

Abstract: 2SB513
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB513 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD366

2SB526

Abstract: 2SD356
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB526 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 APPLICATIONS ·Designed for AF high power dirver applications.

2SD388

Abstract: 2SB541 2SD388 A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB541 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD388 APPLICATIONS ·Designed for audio frequency power amplifier applications.

2SD365

Abstract: 2SB512
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB512 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD365

2SD304

Abstract: 2SD337 2SD309 2SD350 2SD341 2sd370 2SD311 2SD333 2sd316 2SD347
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD301 80 6 10A 50W(Tc=25ºC) 175 2500 4 5A 2SD302 2SD303 2SD304

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

TRANSISTOR B507

Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

2SD315

Abstract: 2SB509
Contextual Info: Inchange Semiconductor Product Specification 2SD315 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SB509 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base 2

2SD315A

Abstract: 2SD315AI IGD 001 2sd315a concept igd 001 concept LDI 001 2SD315 2SD315AN 2sd315a example 4000VACrms CT-Concept Technology
Contextual Info: SCALE Driver ,=J=5DAAJ 5,!# Dual SCALE Driver 2SD315A for IGBTs and Power MOSFETs Description The SCALE drivers from CONCEPT are based on a chip set that was developed specifically for the reliable driving and safe operation of IGBTs and power MOSFETs.

CT-Concept

Abstract: 2SD315A 2sd315ai 2SD315al 2SD315 2SD106Al-17 2SD315Al-33 CT-Concept Technology 6SD106EI-17 1700V
Contextual Info: power the Home Products News Contact Editorials Job Offers Company Search Driver Type No. of Channels Peak Current IGBT VCE Pout/Channel 2SD106A 2 +/-6A 1200V 1W 2SD106Al-17 2 +/-6A 1700V 1W 2SD315A 2 +/-15A 1700V 3W 2SD315AI-25 2 +/-15A 2500V 3W 2SD315Al-33

Sanyo D313

Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

Contextual Info: 2SD369 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD313

Abstract: 2SB507 2sd313 equivalent 2SD313 E
Contextual Info: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE