2SK597 Search Results

Contextual Info: 2SK597A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20Ê I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)170u

2SK332

Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
Contextual Info: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK582

Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS

2SK597

Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

AUDIO AMPLIFIER

Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr

2SK44

Abstract: 2SK41 CAPACITOR MICROPHONE 2SK44 D 2SK24 2sk44sp 2SK336 2SK25 2SD1238 SP 2022
Contextual Info: V «o Vcko t Vf KK Vebu I, P, i , I khii ^CBO V « max Vkb max Vr* Ic f 1>KK U r, V cb Vck I, tf* C«h t c rr 2SD1237 High C urrent Switching 2010A S.EPL 120 80 6 7 Î40 150 80 0.1m 4 0.1m 2 1 - 70-280 5 1 20 ~ - 2SD1238 High C urrent Switching 2022 S,EPL

2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017

2SK41

Abstract: 2SK44 2SK24 CAPACITOR MICROPHONE 2SK44 D 2SK44SP 2SK336 STDP 2SD1237 2SD1238
Contextual Info: V „o tv„« V e BU I, Pc i , I khii IcBO V « max VM max Vr* Ic 1>KK f Ur, VcH Vck Ir tf* C«h t c rr R em arks V cko >• Electrical Chatacteristics/Ta=25°C A bsolute M aximum Ratings/Ta=25°C S tru ctu re Case O utline ICminer.com N > Applications R eplacem ent

sj 2025

Abstract: 2SK597 00Gt
Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

2SK41

Abstract: 2SK331
Contextual Info: V -KO V «o V k bd Î I, V Pc V fK R I kbd bo Vc . max V kb max V('K - 70 -280 Ir tf* V.-B C«h t c rr 5 1 20 - - - - - - 80 0.1m 4 0.1m 12 t80 4 0.1m 2 1 - 70 - 280 5 1 20 2 T 40 150 200 100/* 7 lOO/i 5 0.3 - >35 10 0.3 5 5 1 - >35 10 1 5 - - 5 0.3 - >35