2SC1346 Search Results

Contextual Info: 2SC1346 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.90 h(FE) Max. Current gain.

2SA720

Abstract: 2SA71 2SA730 2SC1317 2sc1318 2SA719 2SA731 2SC1318 P 2SC1346 ic 731
Contextual Info: 2SA719, 2SA720, 2SA730, 2SA731 2SA719, 2SA720, 2SA730, 2SA731 PNP + 7 °U —"M ji/'Si P N P E pitaxial Planar Power Amplifier and Driver 2SC1317, 2SC1318, 2SC1346, 2SC1347 Complementary pair with 2SC1317,2SC1318,2SC1346,2SC1347 Î# /F e a tu re s . 3 U ? ^ • J . i -y * g a fn E E VcE sat>

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SC 8050

Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi­ C0h r n in max (MHz) (MHz) COMPLE­ MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SC1346

Abstract: 2SC1347 2SA730 2SC1317 2SA731 2SC1318
Contextual Info: 2 SC 1346, 2 SC 1347 2 S C NPN T 3 4 6 ; 2 S C 1 3 4 7 + NPN Epitaxial Planar Output Amplifier 2SA730, ¿JSA731 ± z i > ~/U j t> & V /Complementary Pair with 2SA730, 2SA731 if i^/Features • Z2 u ? # • ^ * y VCECsat • 2SA730, 2SA731 v y ° ') s V $ V

2sa726

Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc1175

Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#

2SC200I

Abstract: D471 2SA593 2sc1175 2SC1346 92PU01A 92PU45 2SA659 2SA719 2SA730
Contextual Info: Medium Power Amplifiers and Switches TYPE ' FOLA 1 NO. RJTY CASE MAXIMUM RATINGS W IC VCEO mW (A) (V) HFE aùm VCB<m «) IM I 1C (*A) VCR (V) (V) (A) fT min (MHz) tM X Cok COMPLE 1 m x MENTARV TV PIS <PF) 2 SCI 004 2 SCI 175 2SC1209 2SC1317 •2SC1318 M

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

2SD424 TOSHIBA

Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
Contextual Info: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2SC1313

Abstract: 2SC1302 2sc1400 2SC1312 2SC1389 2SC1370 2SC1305 2SC1371 2SC1364 2SC1307
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC1301 250 5 30A 2SC1302 400 5 30A 2SC1303 40 4 300 2SC1304 300 5 500 Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA)

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

92PU

Abstract: 92PU05 TQ-237 92PU06 2SA598
Contextual Info: MICRO ELE CTRONICS LTD 3I E I> B b O ^ lT ä S 0000=121 2 D M E H K Medium Power Amplifiers and Switches ~T-2Sl-ot TYPE NO. P O L A R IT Y T -3 3 -D / CASE M A X IM U M R A T IN G S Pd mW 'c (A) H V CEO (V) min V C E (SA T ) FE max 'c Im A) VCE (V) max

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK