2SA71 Search Results

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

2SA714

Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA714 DESCRIPTION • W ith T O -3 package • W ide area o f safe operation APPLICATIONS • For pow er am plifier and power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN

2SA714

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA714 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications. ·Power switching applications.

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

2SC 8050

Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi­ C0h r n in max (MHz) (MHz) COMPLE­ MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B

Contextual Info: -J loaucti, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA715 Silicon PNP Power Transistor DESCRIPTION • Good Linearity of hFE • Collector-Emitter Breakdown VoltageV(BR)CEo= -35V (Min)

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

2SA970BL

Abstract: BC212A 2SA720r 2SA733P 2SA970 Transistor BC212B 2SA719 2SA719Q 2SA719R 2SA719S
Contextual Info: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30

2sc1162

Abstract: 2SA715
Contextual Info: HITACHI 2SC1162 SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 1. [Imitier 2. Collector J. fl;« Dimcüsioi^ inmm} (JË Û Ë C TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA714 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-100V(Min.) • Wide Area of Safe Operation

transistor 2sa720

Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage

toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398

2SA970BL

Abstract: 2SA733P 25A933 2SA720r 2SA970 2SA719 2SA719Q 2SA719R 2SA733 2sa733p 2sa733q 2SA720
Contextual Info: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30

Contextual Info: HITACHI 2SA715 SSLICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER" COMPLEMENTARY PAIR WITH 2SC1162 5 t . 2. {JEDEC TO-126 MOO. • ABSOLUTE MAXIMUM RATINGS <Tu=25°Ci lien» S s m tn l C ollector to base voltage t llllllc r to 2SA715 j Vcuo C ollector to em itter v illa g e : V i t o

2sc1162

Abstract: 2SA715 DSA003644 Hitachi 2SA
Contextual Info: 2SC1162 Silicon NPN Epitaxial ADE-208-880 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2sa715 equivalent

Abstract: 2SA715 2sc1162 DSA003644 Hitachi 2SA
Contextual Info: 2SA715 Silicon PNP Epitaxial ADE-208-852 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating

2SC1318

Abstract: 2SC1317 transistor 2SC1317
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.

2SA720

Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720
Contextual Info: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to

2SA715

Abstract: 2sa715 equivalent 2sc1162
Contextual Info: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

transistor 2SC1162

Abstract: 2SA715 2sc1162
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier

2SC1162

Abstract: Hitachi DSA002754
Contextual Info: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage