2SC1162 Search Results

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

2sc1162

Abstract: 2SA715
Contextual Info: HITACHI 2SC1162 SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 1. [Imitier 2. Collector J. fl;« Dimcüsioi^ inmm} (JË Û Ë C TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2sa715 equivalent

Abstract: 2sc1162 Hitachi DSA001650
Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

Contextual Info: HITACHI 2SA715 SSLICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER" COMPLEMENTARY PAIR WITH 2SC1162 5 t . 2. {JEDEC TO-126 MOO. • ABSOLUTE MAXIMUM RATINGS <Tu=25°Ci lien» S s m tn l C ollector to base voltage t llllllc r to 2SA715 j Vcuo C ollector to em itter v illa g e : V i t o

2sc1162

Abstract: 2SA715 DSA003644 Hitachi 2SA
Contextual Info: 2SC1162 Silicon NPN Epitaxial ADE-208-880 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2sa715 equivalent

Abstract: 2SA715 2sc1162 DSA003644 Hitachi 2SA
Contextual Info: 2SA715 Silicon PNP Epitaxial ADE-208-852 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating

2SA715

Abstract: 2sa715 equivalent 2sc1162
Contextual Info: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

transistor 2SC1162

Abstract: 2SA715 2sc1162
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier

2SC1162

Abstract: Hitachi DSA002754
Contextual Info: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O

transistor C 2290

Abstract: transistor 2SC1162
Contextual Info: 2SC1162 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECOTR 3.900 4.100 3.000 3. BASE 3.200 3 10.60 0 11.00 0 2 0.000 0.300 1 2.100 2.300 Features 1.170 1.370 Low frequency power amplifier 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sc1162

Abstract: 2SA715
Contextual Info: JMnic Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sc1162

Abstract: transistor 2SC1162 2SC1162C 2SC1162-B 2SC1162-C 2SC1162-D 2SC1162 C
Contextual Info: 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE 1

to-126 transistor

Abstract: transistor 2SC1162 2sc1162
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low frequency power amplifier 2. COLLECOTR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2sc1162

Abstract: 2sc1162 equivalent 2SA715 2SC116 2SC1162 max frequency
Contextual Info: SavantIC Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: 2SC1162D Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.160 h(FE) Max. Current gain.320

transistor 2SC1162

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low Frequency Power Amplifier 2. COLLECOTR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

2SA715A

Abstract: 2sc1162
Contextual Info: HITACHI 2SC1162 SIC ICON NPN EPITAXiAL LOW FREQUENCY'POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 a~. 15 6 ±0.5 i i OuliCtUM i, < D in ie> .v> i»tf»s i n u w « } JEDEC TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS <Tu=25°C)

Contextual Info: 2SC1162 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SA715 Outline TO -126 MOD 1. Em itter 2. Collector 3. Base 2 g Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2sc1162

Abstract: 2SA715
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier