2SC116 Search Results

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

2SC1161

Contextual Info: SavantIC Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2SC1166

Abstract: 2sc1166y transistor BC RH 2sc1166-0 2sc1166 o 2SA661 2SC1166-Y 16F TRANSISTOR RH-16 2SC1166-GR
Contextual Info: i/U 3 > N P N x ti* * 5 /7 h 7 > v X i/ P C m SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) 2SC1166 O Driver Stage Amplifier Applications. Voltage Amplifier Applications. O • S t f E - t r f ; V Ceo ^ 5 0 V • : Pc = 600mW (Ta=25°C) • 2SA 661 t ^ y 7 ° ) s y * y

2SC1169

Abstract: L4 toshiba 3I33
Contextual Info: 5h TOSHIBA {DISCRETE/OPTO} DE I ^ D T V a S D DOQTMBfl 7 | / 9097250 TOSHIBA ' C D I S C R E T E /O P T O SILICON NPN EPITAXIAL PLANAR TYPE 5bC 0 7 ^ 3 8 0 T - 3 / - 3 3 2SC1169 . Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0a39MAX 8.5MAX FEATURES

BR 103 equivalent

Abstract: 2SC1169
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1169 Unit in œm VHF BAND POWER AMPLIFIER APPLICATIONS. 0&39MAX. FEATURES & 5M A X , : Outtmt Power : P 0 =2.5W Min. ( f=175MHz, VCC=13.5V, Pi=0.25W ) ,00. 45 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

2SC1165

Abstract: 2SC116
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1165 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. 0a39M A X . Jía 4 5 M A X . FEATURES: -t' . Output Power : Fo= 0 .9W Min. (f=470MHz, Vcc=12.6V, Pi=0.3W) . All Electrodes Insulated from Case. ^ 0 .4 5 MAXIMUM RATINGS

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

2sc1162

Abstract: 2SA715
Contextual Info: HITACHI 2SC1162 SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 1. [Imitier 2. Collector J. fl;« Dimcüsioi^ inmm} (JË Û Ë C TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SC1163

Contextual Info: SavantIC Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated

2sa715 equivalent

Abstract: 2sc1162 Hitachi DSA001650
Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

Contextual Info: HITACHI 2SA715 SSLICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER" COMPLEMENTARY PAIR WITH 2SC1162 5 t . 2. {JEDEC TO-126 MOO. • ABSOLUTE MAXIMUM RATINGS <Tu=25°Ci lien» S s m tn l C ollector to base voltage t llllllc r to 2SA715 j Vcuo C ollector to em itter v illa g e : V i t o

2sa715 equivalent

Abstract: 2SA715 2sc1162 DSA003644 Hitachi 2SA
Contextual Info: 2SA715 Silicon PNP Epitaxial ADE-208-852 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating

2sc2915 hitachi

Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
Contextual Info: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514

2SA715

Abstract: 2sa715 equivalent 2sc1162
Contextual Info: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC1164

Abstract: 2sc1164 O B298
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1164 Unit in mn HIGH POWER A M P L IFIER EOR CATV APPLICATIONS. 0 9 . 3 9 MAX . 08.45M A X . FEATURES: . Wide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. . All Electrodes. Insulated from Case.

2SC116

Abstract: 2sc1164
Contextual Info: TOSHIBA St, {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T V E S O bfaC 07434 DDG7H34 0*T -3/-Q.) 2SC1164 SILICON NPN EPITAXIAL PLANAR TYPE_ _ Unit in ram HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. 0â39M AX , 0&45M AX . FEATURES : . Wide Band and High Gain for Class A Amplifier.

2SC1161

Contextual Info: Inchange Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.

2SC1163

Abstract: transformerless
Contextual Info: Inchange Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated

transistor 2SC1162

Abstract: 2SA715 2sc1162
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier

2SC1162

Abstract: Hitachi DSA002754
Contextual Info: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O