2SB1070 Search Results

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Rower T ransistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD 1538, 2SD 1538A Unit : mm 6.7m«x. • Features • t o w collector-eimitter saturation voltage • High speed switching

Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 3.4±0.3 8.5±0.2 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Low collector to emitter saturation voltage VCE sat

Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 1.0±0.1 Unit VCBO −40 V 2SB1070 −20 VCEO Emitter-base voltage Collector open VEBO −5 V IC −4 A ICP −8 A PC 25 W Tj 150 °C Tstg −55 to +150

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE sat High-speed switching

Schottky diode Die

Contextual Info: 2SB107040MLYY 2SB107040MLYY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB107040MLYY is a schottky barrier diode chips Ø Low power losses, high efficiency; La Lb fabricated in silicon epitaxial planar technology; Ø Guard ring construction for transient protection;

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE sat High-speed switching

Contextual Info: Product specification 2SB1070A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1

P-862

Abstract: 2SB1070 2SB1070A 2SD1538 2SD1538A
Contextual Info: 2 SD 1 5 3 8 , 2 SD 1 5 3 8 A P o w e r T ra n s is to rs 2S D 1538, 2S D 1538A Silicon NPN Epitaxial Planar Type Package D im ensions Low V oltage Sw itching C om plem entary Pair with 2SB1070, 2SB1070A U n it I mm • Features 8 .7 r • L o w c o lle c to r - e m itte r s a t u r a t io n v o lta g e V cE isao

NJ 15 U1 W

Contextual Info: Power Transistors 2SD1538, 2SD1538A 2SD1538, 2SD1538A Silicon NPN Epitaxial Planar Type • Package D im ensions Low V oltage Sw itching C om plem enta ry Pair w ith 2SB1070, 2SB1070A U n it I mm ■ Features 8.7 r • Low collector-em itter saturation voltage VcEisao

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A tk 100 A p257
Contextual Info: Rower Transistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD1538, 2SD1538A U nit : mm 3.7 m ix. f—* • Features 6.5 max. • to w collector-eim itter saturation voltage Vceo.»

2SB1070A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1070A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB1070

Abstract: 2SB1070A
Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 6.0±0.2 1.0±0.1 Rating Unit VCBO −40 V −20 Collector-emitter voltage 2SB1070 Base open 2SB1070A VCEO Emitter-base voltage (Collector open) VEBO

2SB1070

Abstract: 2SB1070A
Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Symbol Rating Unit VCBO −40 V 2SB1070 2 −50 2SB1070A Collector-emitter voltage 2SB1070 Base open 2SB1070A VCEO Emitter-base voltage (Collector open)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1013

Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
Contextual Info: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367