2N6191 Search Results

2N6191

Abstract: 2N6193, Motorola 2N6193 2N6190
Contextual Info: MOTORCLA SC XSTRS/R F 15E D | b3b?2S4 GGöMtiOB b | 7^33^ 2N6190 . 2N6191 2N6193 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AMPERE MEDIUM-POWER PNP SILICON TRANSISTORS . . . designed for switching and wide band amplifidr applications. • Low Collector-Emitter Saturation Voltage —

2N6191

Contextual Info: 2N6191 Chip: geometry 9700; polarity PNP 9.98 Transistors Bipolar Silicon PNP Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N6191 Online Store 2N6191 Diodes Chip: geometry 9700; polarity PNP Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N6191 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)10

2N6191

Abstract: 2n6193 chip type geometry
Contextual Info: Data Sheet No. 2C6193 Generic Packaged Parts: Chip Type 2C6193 Geometry 9700 Polarity PNP 2N6190, 2N6191, 2N6192, 2N6193 Chip type 2C6193 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N6190, 2N6191, 2N6192, 2N6193

Contextual Info: 2N6190 2N6191 2N6192 2N6193* hnasr *n Iso availabc as JAN, JANTX, JANTXV 5 AMPERE M E D IU M POWER PNP S ILIC O N TRANSISTO RS . , . designed for switching and wide band amplifier applications. • Low Collector-Emitter Saturation Voltage — VcE(sat = 1-2 Vdc (Max) @ I q = 5.0 Amp

2N5337

Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Contextual Info: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0

2N5969

Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20

2N6193

Abstract: 2N6192 2N6190 2N6191 2N5338 2N5339 VE60
Contextual Info: XOOlOÛ 2N6192 AND 2N6193 5 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS U r u n r a ll 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDEC TO— 5 FEATURES • R A D IA T IO N • FAST TO LERA N T

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

BU406

Abstract: transistor BU406 2N5337 2N6191 BU407 BY205 TIP31 TIP32 to220 5 lead plastic TRANSISTOR TIP31
Contextual Info: BU406, BU407 NPN SILICON POWER TRANSISTORS ● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted)

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N6191

Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
Contextual Info: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE

MDC1000A

Abstract: 1811P3C8 MDC1000 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100E
Contextual Info: ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors POWER TRANSISTORS 12 AMPERES 1200 VOLTS — VCES 50 and 150 WATTS The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODEt bipolar power transistors. They are specifically

MC1391

Abstract: MJW16212 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
Contextual Info: ON Semiconductort MJW16212 * SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *ON Semiconductor Preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS – VCES 50 AND 150 WATTS The MJW16212 is a state–of–the–art SWITCHMODE bipolar

MJ16010

Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16
Contextual Info: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The

Contextual Info: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector Current TO-220 PACKAGE TOP VIEW 60 W at 25°C Case Temperature This series is obsolete and not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

2n5859 equivalent

Abstract: BFW16A bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP