T25M40
Abstract: SKC25B75 SEMIKRON book ibm ppc 440
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 •30 >= 20 A, Semikron Semikron ~~~~~8(p.) ~~nyo ~~ect BUV51 (A) BUW51 (A) BUW1B BUW1B BUW19 2N3771 1561·040B 1561·040B 1061-041U 1561-0410 MJ3771 2N5301 BOX41 2N2757 2N2763 2N2769 2N2775 5250·50
|
Original
|
skc25b75skc25k75t25m40gsru20040+72sc29032sc30b5skc25kb52sc34552sc39bbsemikron bookibm ppc 440
|
PDF
|
SKC25K85
Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25
|
Original
|
gsru200402sc2903skc25b70skc25b75+11skc25k852sc39882sc34552sc3989bup38st290452sd319p1743-0630buw18sdt97011561-0810
|
PDF
|
2N1016
Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,
|
OCR Scan
|
ddgd43t2n10152n10162n3429-32+122n1015a2n1016a2n3429152-to-822n27722n27712n1016d2n2227to822n22282n1016b2n3430
|
PDF
|
2N2824
Abstract: 2N2819 2N2771
Contextual Info: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10
|
OCR Scan
|
2n27572n27582n27592n2760+92n27612n27632n27642n27652n27662n27692n28242n28192n2771
|
PDF
|
2N2753
Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068
|
OCR Scan
|
2n3892n389a2n4242n424a+142n10152n1015a2n1015b2n1015c2n1015d2n1015e2n2753s1482jan2n1480jantx 2n27712n2034jan2n14822n2580m2n2110
|
PDF
|
2N2772
Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT
|
OCR Scan
|
2n10152n1015a2n10162n1016a+132n34292n3429-32mt-52mt-332n2772to822n22322n34752n22272n34712n22282n22262n1050c
|
PDF
|
LM3661TL-1.25
Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo le V A V V Sat Voltages 3> hFE MIN MAX le A V ce VCE V be V V V Test Conditions le Ib A A lEBO ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15
|
OCR Scan
|
2n27572n27582n27592n2760+72n27612n27632n28252n28162n3260o-114lm3661tl-1.25
|
PDF
|
2N2772
Abstract: 2n2770
Contextual Info: POWER TRANSISTORS Sat Voltages PT TYPE NO. @ 25°C Watts h FE M A X I M U M R A T IN C S Ic B V c b c BV ceq B V e b o V V V A i> M IN M AX Ic A Test Conditions Vet V be Ic Ib lEBO V V V A A ma r VCE 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200
|
OCR Scan
|
2n27572n27582n27592n2760+82n27612n27632n27642n27652n27662n27692n27722n2770
|
PDF
|
Darlington npn stud mount
Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Contextual Info: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25
|
OCR Scan
|
7hc14ti51imt-52mt-33darlington npn stud mount+8to822n34292n68402n10152n10162n3470-73to82 package40240
|
PDF
|
2N4148
Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.
|
OCR Scan
|
2n2419a2n30012n37302n4002+152n41402n42992n24832n30022n37312n40032n41482n3638 transistor2n3638transistor 2n30052n27062n4146transistor 2n27062n42502n4147
|
PDF
|
2N2227
Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32
|
Original
|
2n10152n10162n3429-322n1015a+122n1016a2n3429mt-522n22272n22282n2772152-062n3431154-04to822n34302n2229
|
PDF
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
|
PDF
|
RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
|
OCR Scan
|
rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
|
PDF
|
2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
|
OCR Scan
|
1n34a1n55ab1n1001n102+161n1031n1041n1071n1081n111/1n1172n2222a mps2n512ab2n2222 mps1n10961n5891n4007 - 2n40012n698 scr1n233a1n204612n3304
|
PDF
|
|
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
TO82 TRANSISTOR
Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C
|
OCR Scan
|
25mqsa2n10152n1015a2n1015b+92n1015c2n1015d2n19042n19362n19372n2015to82 transistorto822n2227
|
PDF
|
WESTINGHOUSE transistor
Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Contextual Info: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3
|
OCR Scan
|
2n2757-7830-amperefor2n27602n2766+142n27722n2778c/2116/dbc/2117westinghouse transistorwestinghouse co 8westinghouse relaywestinghouse transistorswestinghouse semiconductorwestinghouse power transistor2n27612n27712n2770westinghouse
|
PDF
|
2N2818
Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo Ic V A V V Sat Voltages 3> hFE MIN MAX Test Conditions Ic A V ce VCE V be Ic Ib lEBO V V V A A ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10
|
OCR Scan
|
2n27572n27582n27592n2760+72n27612n27632n27642n27652n27662n27692n2818
|
PDF
|
2N2757
Abstract: 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769
Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 MIN MAX le A V ce VCE V be V V V Test Conditions le Ib lEBO A A ma 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10 10 4 1.5 2.5 10 2 25 2N2759 200 150 150 15 30 10 10 4 1.5 2.5 10 2 25 2N2760 200 200 200
|
OCR Scan
|
2n27572n27582n27592n2760+62n27612n27632n27642n27652n27662n2769
|
PDF
|
2N2875
Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7552n28752n28362n27822n27732n28692n2840 rca2n27502n27682n1893 motorola2n2857 semicoa
|
PDF
|
TO82 TRANSISTOR
Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C
|
OCR Scan
|
e6djp073l254d222n10152n1015a+162n1015b2n1015c2n1015d2n1015e2n10162n1016ato82 transistornpn 2n23832n27532nxxxx2n1069to53transistor 2n23832n11172n16202n2227
|
PDF
|
2N2824
Abstract: 2N2761 2N2757 2N2758 2N2759 2N2760 2N2763 2N2764 2N2765 2N2766
Contextual Info: 8365700 SOLID POWER CORP 95C 0 0 1 1 8 SOLID POWER CORP TS D *T'S3-öl » F | fl3bS7D0 □□□□Hfl t POWER TRANSISTORS TYPE NO. TO-63 MAXIMUM RATINGS Ic B V c b o B V ceo B V ebo V A V V (5 hFE MIN MAX Ic A V CE V Sat Voltages V CE V be V V Test Conditions
|
OCR Scan
|
2n27572n27582n27592n2760+72n27612n27632n27642n27652n27662n28152n2824
|
PDF
|
2N2772
Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: A P I ELECTRONICS INC blE J> I 00M35T2 O O O O ^ b 45T « A M C POWER TRANSISTORS TYPE NO. TO-63 24 PT MAXIMUM RATINGS @ 25°C B V cb o B V ceo B V ebo Ic V A V V Watts Ic A VCE V Sat Test Voltages Conditions V ce V be Ic Ib lEBO V V A A ma hFE < MIN MAX
|
OCR Scan
|
2n27572n27582n27592n2760+72n27612n27632n27642n27652n2766n27692n2772
|
PDF
|
2N4211
Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Contextual Info: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110
|
Original
|
2n10152n20152n27392n3743+162n40022n60462n1015a2n20162n27402n37712n42112n15142n27532n30542n23382n25802n59282n34722n22272n2228
|
PDF
|
