2907A EBC Search Results

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

2N2907

Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
Contextual Info: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

2907

Abstract: 2N2907 2907a 2N2908 2N2906 2N2907A 2n2906a A2907A J 2N2907 2IM2907
Contextual Info: * 2 N 2906,A * 2 N 2907, A PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNPSILICIUM, PLANAR EPITAXIAUX Compì, of 2N 2221, A and 2N 2222, A ^ Preferred device D is p o s itif recommandé - LF or HF amplification Amplification BF ou HF - Medium current switchinçi

Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product fT : purpose amplifier or switch in applications that require

2N2475

Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

2N3707 DIODE

Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

BFS43

Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
Contextual Info: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction

ZT2120

Abstract: 2N2475 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R(sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C

BAW63A

Abstract: 2N2475 BAW63 BFS46 BFS46A BFS85 BFS88 BSV35 BSV35A BSV36
Contextual Info: M ICRO-E RATING S A N D CH ARACTERISTICS A T 25°C n -p -n BSV35A H IG H -S P E E D S W IT C H IN G T R A N S IS T O R S BSV36 M ax. . M in . M ax. v CBO R ated M a x . - 25 “ 40 VCEO sus 1 (2 = 1 0 m A , l ß = 0 - - 15 - - 20 P aram eter M in . p -n -P

N2222

Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89

2N4041

Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

stepping motor EPSON EM - 234

Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system