BT8550
Abstract: GMBT8550L
Contextual Info: ISSUED DATE :2004/08/27 REVISED DATE : GM BT8550L P N P E P I TA X I A L T R A N S I S T O R Description The BT8550L large current is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10
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BT8550
Abstract: GMBT8550 BT855
Contextual Info: 1/2 GM BT8550 P N P E PI TA XI A L T RA N SI STO R Description The BT8550 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J
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2SC9014
Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225
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ot-232sc1623l3bcw60a2sc1623l4+15bcw60b2sc1623l5bcw60c2sc1623l6bcw60d2sc1623l72sc9014bec npn2sc9013 sot-23bta43bta70ba811bt3904bta42bt5551
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LB121A
Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C
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bt1815hmbt1q15bt2222abt2907a+16hbc807bc817bt5087bt5088bt8050bt8550lb121atif42cjapan transistortif41ctif32che9013htransistor ebc 39043842psc2625bd238 ev
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