BT5088 Search Results

Contextual Info: IL BT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g C M BT5088 = 1Q CM BT5089 = 1R _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: MOTOROLA 6367254 "Üä SC Í X S T R S / R FJ M OT O RO L A SC CXSTRS/R M A XIM U M RATINGS »F|t:3t,7ES4 ODflSDMô S J"~ F 96D 8 2 0 4 8 1 T'Z9'/5 Value Sym bol M M BT5088 M M BT5089 Unit Collector-Emitter V oltage v CEO 30 25 V dc Collector-Base V oltage

BT5401

Contextual Info: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C

BTS089

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon BT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

5089

Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Contextual Info: 2N5088/5089 / BT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features BT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

BCW32

Abstract: MMBT5088 T2R marking marking ASE
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW32 14E D | 7 ] b i m e 0007201, 0 | NPN EPITAXIAL SILICON TRANSISTOR T-2H- ,= 1 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BCX70G

Abstract: MMBT5088
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCX70G me Ó J 7^4142 OO0725G 5 | NPN EPITAXIAL SILICON TRANSISTOR “ T — GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C