7U4142 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c

MPS2907

Abstract: MPS2907A PN2907A
Contextual Info: SAM S UN G SEMICONDUCTOR INC IME D MPS2907A | 7U4142 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo = 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracteristic

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> MMBTH17 B 7U4142 000^054 2 »StlGK NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation

Contextual Info: SAMSUNG SEMICONDUCTOR INC 23E D 7U4142 OQOÖäOb 7 • T - £ 2 - 3 3- BUS CONTROLLER FOR 80286 MICROPROCESSORS KS82C288 FEATURES/BEN EFITS DESCRIPTIO N • Provides commands and control or local and system bus In 80286-based machines The 20-pin C M O S KS82G288 controls buses in 80286based computer systems. The Bus Controller provides

7m142

Contextual Info: SAMSUNG ELECTRONICS INC 42E D LM324 • 7U4142 POG'1372 S O S f l G K LINEAR INTEGRATED CIRCUIT QUAD LOW POWER OP AMP The LM324 of quad operational am plifiers are very low power operation, and can operate at supply voltages from 3 volts to 32 volts. FEATURES

Opamp Voltage follower

Abstract: XZ 068 c3875 KS0083 KS0103 KS0104
Contextual Info: KS0103 CMOS DIGITAL INTEGRATED CIRCUIT 68 CHANNEL CO M M O N DRIVER FOR DOT M ATRIX LCD 80 QFP The K S 0 1 0 3 is a LCD driver LSI w hich is fabricated by low pow e r CM O S high voltage p ro ce ss tech n olo gy. This device co nsists of 6 8 bit bidirectional shift register, 6 8 bit level shifter and 6 8 bit 4-level

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 00002^ KM62256A/KM62256AL 1 ■ CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 60, 100, 120 ns max . • Low Power Dissipation Standby: 0.55mW (max.) Operating: 248mW (max.) • Low Data Retention Current: 50jiA (max.)

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: SAMSUNG SE MI CONDU CT OR INC Tfl KA3524 DE 7TL41M5 OO OMbSl b LINEAR INTEGRATED CIRCUIT REGULATOR PULSE WIDTH MODULATOR The KA3524 regulating pulse width modulator contains all of the control circuitry necessary to Implement switching regulators of either

Contextual Info: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)

Contextual Info: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification

pixel clock generator ttl

Contextual Info: SAMSUNG ELECTR ONI CS INC M2E D KS82C670/671 BB 7 T b M m 2 000^470 S • SMGK Video Clock Generator P relim inary FEATURES • Single/Dual Clock output versions • Custom ROM programmed frequencies up to 100 MHz ■ "On-the-1ly,rfrequency selection • Separate on-chip Phase Locked Loops

rb414

Abstract: KM44C1003
Contextual Info: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

512X16

Abstract: KM6164002B 512X16 sram
Contextual Info: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

KM622568

Abstract: KM62256B
Contextual Info: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)

Contextual Info: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)

Contextual Info: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC 42E D KA2220 S 7^4142 0 0 0 =120 0 S E3SMÛK LINEAR INTEGRATED CIRCUIT 'T - 'n - T A EQUALIZER AMPLIFIER WITH ALC The KA2220 Is a monolithic integrated circuit consisting of a preamplifier and ALC circuit for cassette tape recorders

Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance

Contextual Info: K S 8 8 C 0 1 16 Mi crocontroller ELECTRO NICS DESCRIPTION The KS88C0116 single-chip 8-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, two 16-bit timer/counters, a large number of general I/O pins, a UART, and a 16-bit backup timer,

KMM591000A

Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity

29V040

Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us

Contextual Info: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.