29V040 Search Results
29V040 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM29W040AT, KM29W040AIT_ FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V |
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KM29W040AT, KM29W040AIT_ KM29W040AIT KM29V040 KM29N040 29W040 | |
29V040Contextual Info: FLASH MEMORY 29V040T, 29V040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. Historv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right |
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KM29V040T, KM29V040IT KM29V040 KM29N040 29W040 29V040 | |
29V040Contextual Info: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi 29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ |
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M29V040 120ns TSOP32 TSOP32 29V040 | |
29V040Contextual Info: PRELIMINARY 29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us |
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KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040 | |
Contextual Info: 29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The 29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program |
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KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040 | |
Contextual Info: FLASH MEMORY KM29N040T, KM29N040IT Document Title 512K X 8 Bit NAND Flash Memory Revision History Revision No. Historv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SA M S U N G Electronics. SAM SU N G Electronics C O., LTD. reserve the right to c h an g e the |
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KM29N040T, KM29N040IT KM29V040 KM29N040 29W040 | |
Contextual Info: FLASH MEMORY 29V040T, 29V040IT Document Title 512K X 8 Bit NAND Flash Memory Revision History Revision No. Historv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right |
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KM29V040T, KM29V040IT KM29V040 KM29N040 29W040 | |
29V040Contextual Info: 29V040T, 29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
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KM29V040T, KM29V040IT 29V040 | |
km29v040t
Abstract: yd 4145 km29v040 V040T
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KM29V040T 512Kx8 500us 400mil/0 KM29V040T 512Kx8bit KM29V040 yd 4145 V040T | |
10th up board exam date sheet
Abstract: KM29N040T
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KM29N040T, KM29N040IT KM29V040 KM29N040 29W040 10th up board exam date sheet KM29N040T |