25KMB Search Results

7C192-12

Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

Contextual Info: CY7C408A CY7C409A " s CYPRESS SEMICONDUCTOR Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-MHz shift in and shift out rates • Almost Full/Almost Empty and Half Full flags • Dual-port RAM architecture • Fast (50-ns) bubble-through

Contextual Info: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine

CY7C429-25PC

Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
Contextual Info: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs

Contextual Info:  7& 3DUDOOHO 3520. .[  )HDWXUHV ‡ )DVW5HDG$FFHVV7LPHQV ‡ )DVW%\WH:ULWHPV ‡ 6HOI7LPHG%\WH:ULWH&\FOH ‡ ‡ ‡ ‡ ‡ ‡ ‡ ±,QWHUQDO$GGUHVVDQG'DWD/DWFKHV ±,QWHUQDO&RQWURO7LPHU ±$XWRPDWLF&OHDU%HIRUH:ULWH 'LUHFW0LFURSURFHVVRU&RQWURO

Contextual Info: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

CY7C

Abstract: lc 245a Lh+245a
Contextual Info: CY7C245A CYPRESS I SEMICONDUCTOR • 5V ±10% V cc. commercial and military Features • Windowed for reprogrammablllty • TT L-com patible I/O • CMOS for optimum speed/power • High speed — IS ns max set-up — 10 ns clock to output • Low power • Direct replacement for bipolar

10-25l

Abstract: palc22v10a 10L25 1025HC
Contextual Info: PALC22V10 CYPRESS SEMICONDUCTOR Reprogrammable CMOS PAL Device • U p to 22 in p u t term s a n d 10 ou tp u ts • A dvanced secon d -gen eration PAL architectu re • H igh reliab ility • Low power — Proven E P R O M tech n ology — 100% p rogram m ing an d fu n ctio n a l

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

Contextual Info: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power

CY7C425

Abstract: CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC CY7C421 CY7C429 IDT7201 IDT7203 CY7C429-30PC
Contextual Info: 4bE D CYPRESS SSflTbbS □007117 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs • Pin compatible and functional

Contextual Info: CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 W" ‘ *K- CYPRESS SEMICONDUCTOR Features • 512 x 9,1,024 x 9,2,048 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 33.3-MHz read/write independent of depth/width

Contextual Info: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

cy7c291

Abstract: CY7C291A CY7C292A CY7C293A CY7C291-35WMB
Contextual Info: CY7C291A CY7C292A/CY7C293A SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial Reprogrammable 2K x 8 PROM • D irect rep lacem en t fo r b ip o lar PR O M s • C apable o f w ith stan d in g >2001V s ta t­

Contextual Info: = CY7C408A CY7C409A CYPRESS SEMICONDUCTOR Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-M Hz shift in and shift out rates • Almost Full/Almost Empty and H alf Full flags • Dual-port RAM architecture • Fast (50-ns) bubble-through

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

236s2

Contextual Info: PALCE22V10 F CYPRESS Features 3 ns t$ 5 ns tpD 181-MHz state machine • Low power — 90 mA max. commercial 10 11s Functional Description — 10 ns m ilitai? and industrial ver­ sions 7 n stc o 6 n s ts 10 n s tpD 110-MHz state m achine — 130 mA max. commercial (5 ns)

Contextual Info: PALC22V10 CYPRESS SEMICONDUCTOR Reprogrammable CMOS PAL Device • Up to 22 input terms and 10 outputs • Advanced second-generation PAL architecture • High reliability — Proven EPROM technology • Low power — 55 mA max. “I!’ — 100% programming and functional

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

7c198

Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
Contextual Info: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­

CY7C425

Abstract: C4206 1DT7201 CY7C429-20DC CY7C420
Contextual Info: 4b E D CYPRESS SSflTbbS □ 0 0 7 1 1 7 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs