25N90 Search Results

Contextual Info: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

LQ25

Abstract: 0B4 DC-DC
Contextual Info: inixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET v D DSS 900 V 900 V IXFN 26N90 IXFN 25N90 bss 26 A 25 A DS on tr r 0.30 Q 250 ns 0.33 Q 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions

26N90

Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828
Contextual Info: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions

Contextual Info: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol

Contextual Info: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il

125OC

Abstract: 25N90 26N90
Contextual Info: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

26N90

Contextual Info: VDSS Power MOSFETs Single Die MOSFET ID cont RDS(on) 26 A 25 A 0.30 Ω 0.33 Ω IXTN 26N90 900 V IXTN 25N90 900 V N-Channel Enhancement Mode D G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont 900 V 900 V 26 A 25 A RDS(on) trr 0.30 Ω 250 ns 0.33 Ω 250 ns D G Preliminary data sheet S S Symbol Test Conditions

fast IXFX

Abstract: 125OC 25N90 26N90 IDSS
Contextual Info: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS Single MOSFET Die Maximum Ratings Symbol Test Conditions v Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V Continuous Transient ±20 ±30 V V 26 25 104 100 26 25 A

IXFN26N90

Abstract: 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET 25N90 IXFN26N90 VDSS ID25 RDS on 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

wabash

Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 25N90 25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXFX25N90

Abstract: IXFX26N90
Contextual Info: HiPerFETTM Power MOSFETs 25N90 25N90 IXFK26N90 IXFX26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268