IXFX25N90
Abstract: IXFX26N90
Contextual Info: HiPerFETTM Power MOSFETs IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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ixfk25n90ixfx25n90ixfk26n90ixfx26n90+4o-26425n9026n90plus247
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IXFH32N50Q equivalent
Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Contextual Info: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω
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ixfd50n20-7xixfd50n20q-7xixfd80n20q-8xixfd90n20q-8y+11ixfd120n20-9xixfd180n20-9yixfd60n25q-8xixfd100n25-9xixfd40n30-7xixfd40n30q-7xixfh32n50q equivalentixfk24n100ixfn80n501672 mos-fetixfh40n30
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Contextual Info: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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ixan00090009ixan0009 2ixan0009 3+6tms320f2407age scr manualmosfet inverter 2kw 100khzsmps 1kwschematic diagram inverter 500w using mosfetschematic diagram pwm inverter 500w
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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ixfd76n07-7xixfd180n07-9xixfd340n07-9yixfd180n085-9x+16ixfd280n085-9yixfd75n10-7xixfd80n10q-8xixfd170n10-9xixfd230n10-9yixfd70n15-7xixfd21n100f-8fixfd38n100q2-95diode 1581ixys ixfk21n100qixfh40n30ixfh40n50qixfk38n80q27y 6ixfb50n80q2ixfn80n50
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ne 22 mosfet
Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)
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isoplus220tmisoplus247tmvt0268t0264+16ot227bo-263o-220247tmo-247o-204ne 22 mosfetixfh26n60qixft12n100qixfr100n25ixfn26n90fn230ixfn36n60n50pixfn44n50u2ixfn80n50
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POWER MOSFET 4600
Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Contextual Info: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X
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1xfd76n07-7xixfd180n07-9xixfd340n07-9yixfd67n10-7x+16xfd75n10-7xixfd75n10q-7xxfd80n100-8xxfd170n10-9xxfd230n10-9yixfd70n15-7xpower mosfet 4600mosfet 46004600 mosfetixfd80n20q-8xixfd40n30-7xixfx90n20q1219xixfn80n50ixfn44n80ixfn39n90
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