22DBTYP Search Results

Contextual Info: SURFACE MOUNT COUPLERS Typical Performance Plots Coupling vs Frequency 23.0 22.0 S' 210 Frequency: 1800-2000 MHz Coupling: Flatness: Insertion Loss: 20 ± 1.0 dB 0.7 dB Max. 0.2dBTyp. 0.3 dB Max. 22dBTyp. 18 dB Min. 1.30:1 Max. 10 watts Max. Directivity: VSWR:

3SK242

Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
Contextual Info: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

AI 186 N

Abstract: A440M 3.5V HBT MMIC Amplifier
Contextual Info: ejfl Stanford Microdevices Product Description SLN-186 Stanford M icrodevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface m ount plastic package. A Darlington configuration is used for broadband performance

3SK129

Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Contextual Info: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘

3SK205

Abstract: 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes
Contextual Info: - 182 - f M £ tí: £ m & m s * K 3SK197 B ÍL 3SK198 m X m Vg s * X 5* V 12 DSX ±10 35m D 150m ±100n ±8 ±6 V* (V) * 3: P d /P c h (A) % S fë i* * (W) Ig s s (max) (A) VHF TV Tuner MOS N DE UHF RF MOS N DE 13.5 DS ±8 30m D 200m ±50 ß Vg s (V)

3SK35

Abstract: 3SK48 3SK51 3SK40 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59
Contextual Info: - 174 - f € sa s tt £ m & ft £ £ ± S fë P d /P c h K T j. 7 H % ft/ V * fr fr (V) (A) * m Ig s s (max) (A) Vg s (V) (min) (A) & tö tt f t (Ta=25<C ) Vpi VP2 (max) V g 2S (max) V g z s (max) (A) (V) (V) (V) (V) (min) (typ) V d s (S) (S) (V) Vg i s

2SK30

Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

3.5V HBT MMIC Amplifier

Contextual Info: ¿¡3 Stanford Microdevices Product Description SLN-187 Stanford M icrodevices’ SLN-187 is a high performance gal­ lium arsenide heterojunction bipolar transistor MMIC housed in a low-cost plastic drop-in package. A Darlington configu­ ration is used for broadband perform ance from DC-4.0 GHz.

TX-429D

Abstract: SGM2006M ne gJ8 sgm2006 TM100-H TM101 TM200-H TM201-M 12GHz TM100
Contextual Info: - 164 - f M É¡ tt € m & m it ñ V*t* Ì % K SGH5003E 'i z - SGH5602E SGM2004M SGM2006M/P V * GaAsHEMT N D 5 DS LN A GaAsHEMT N D 5 DS UHF LN A GaAs/MES N D 12 DSX UHF LN A GaAs/MES N D 12 DSX * (V) -3. 5 0 98 aa. të I* MW LN A m V- 3È X (A) ft P d/P c h

3SK164

Abstract: 3SK184 3SK174 3SK183 3SK192 3SK159 3SK179 3SK182 199D 3SK171
Contextual Info: - 180 - Jl f m s 4t € ffl & m A $ K a æ 3SK160 m, P d/Pch ]/ 3SK159 fë £ V) * * £ * (V) & m V / U H F RF MOS N DE 1 3.5 DS ±8 30m D V / U H F RF MOS N DE 13. 5 DS ±8 30nt D ÜHF TV Tuner MOS N DE 12 DS ±8 Ig s s (max) (A) (min) (A) Vg s (V) % ft

2SK68A

Abstract: 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m * * (A) ^ m P d /P c h . (V) «• të * * (W) Ig s s (max) (A) Vg s (V) (Ta=25°C) te W (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

Contextual Info: ell Stanford Microdevices Product Description SLN-187 Stanford M icrodevices’ SLN-187 is a high performance gal­ lium arsenide heterojunction bipolar transistor MMIC housed in a low-cost plastic drop-in package. A Darlington configu­ ration is used for broadband perform ance from DC-4.0 GHz.

301AT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this