2SK67 Search Results

ic sony 0642

Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
Contextual Info: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h

yc 545

Abstract: 2SK678
Contextual Info: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

Contextual Info: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

tc6105

Abstract: 2SK679 BH rn transistor 10285 TC-6105
Contextual Info: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8

2SK67

Abstract: 1500IU
Contextual Info: 2SK67 Impedance Converter N-channel Silicon Junction FET PACKAGE DIMENSIONS in m illim eters inches 29±0 2 • Low zero gate voltage drain current: l DSS * 20tytA TYP. • High forward transfer admittance: I y « I - 1500/iU TYP. <VDS •= 5.0V, V GS » 0)

2SK674

Abstract: Voltage regulator 0V to 48v 5A
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK674 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . Low Drain-Source ON Resistance : Rd s (ON)=0 .040Sl(Typ.)

Contextual Info: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron

Contextual Info: 6 4 275 25 N E C N E C ELE CT RO NI CS INC ELECTRONICS 2SK679 FEA TU RES • Suitable for switching power supplies, actuater controls, P A C K A G E D IM EN SIO N S in millimvteri inches 52 MAX and pulse circuits • Low RDStoni; R d s (od) “ 0-95 n TYP-

2SK67A

Abstract: Zero-Gate Voltage Drain Current TC-1488
Contextual Info: NEC JUNCTION FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters inches L o w zero gate voltage dra in c u rre n t: I d s s = 2 0 0

2SK679

Abstract: PA33 SC-43B
Contextual Info: 6427525 N E C N E C E L E C T R O N IC S IN C _ ?8D 18862 EL EC TRONICS INC ^ D T- ¿S'-If lir*. v' _D E J b 4 5 7 S a S DOlflfltiS 0 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK679 FEA TU R ES • Suitable for switching power supplies, actuater controls,

Contextual Info: 2SK677-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m

2SK67A

Abstract: 2SK67
Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w zero gate voltage drain c u rre n t: Idss“ 200 m A TVP. in millimeter* {inches} 1-1-8? 0.043

2SK679A

Abstract: transistor d 1991 ar nec 2334 transistor M 7830
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm T h e 2 S K 6 7 9 A , N-channel vertical typ e M O S F E T , is a sw itching device w h ic h can be d ire c tly driven fro m an IC operating w ith a 5 V

28S DIODE

Abstract: 2SK672 hc 175
Contextual Info: 2SK672 FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 03.6 ±0.2 DRIVE APPLICATIONS. 13 2 . Low Drain-Source ON Resistance

2SK676

Abstract: GaAs FET HEMT Chips
Contextual Info: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high

2SK679A

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

TC-2334

Abstract: 2SK679A transistor 7830 A7830
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 FFECT TRANSISTOR 2SK679A N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK679A, N-channel vertical type MOS FET, is a switching

transistor 7830

Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
Contextual Info: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o

2sj165

Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159
Contextual Info: ロード・マップ トランジスタ 機能・用途別（シグナルMOS FET） VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)

2SK673

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK673 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0 3 .6 ± 0 .2 10.3 MAX. Jf . L o w Drai n - S o u r c e ON Resistance

2SK679

Abstract: PA33
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2SK679 • Suitable fo r switching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • Low RDS 0n ; RDS(on) = 0-95 in m illim eters (inches) TYP. 5.2 MAX. (V GS = 4 V, l D = 0 .5 A)

SC-59

Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Contextual Info: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A

Contextual Info: 2SK676-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5.0 V(BR)GSS (V)-3.5 I(D) Max. (A)70m P(D) Max. (W)340m Maximum Operating Temp (øC)150’ I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m